 |  |  | |
| PartNumber | STB26NM60N | STB26NM60ND | STB26N60M2 |
| Description | MOSFET POWER MOSFET N-CH 600V | MOSFET N-CH 600V 21A D2PAK | MOSFET N-CHANNEL 600V 20A D2PAK |
| Manufacturer | STMicroelectronics | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 20 A | - | - |
| Rds On Drain Source Resistance | 165 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 60 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 140 W | - | - |
| Configuration | Single | - | - |
| Tradename | MDmesh | - | - |
| Packaging | Reel | - | - |
| Series | STB26NM60N | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | STMicroelectronics | - | - |
| Fall Time | 50 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 25 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 85 ns | - | - |
| Typical Turn On Delay Time | 13 ns | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
STMicroelectronics |
STB26NM60N | MOSFET POWER MOSFET N-CH 600V | |
| STB26NM60ND | MOSFET N-CH 600V 21A D2PAK | ||
| STB26N60M2 | MOSFET N-CHANNEL 600V 20A D2PAK | ||
| STB26NM60N | MOSFET N-CH 600V 20A D2PAK |