STB30NM

STB30NM60ND vs STB30NM50N vs STB30NM60N

 
PartNumberSTB30NM60NDSTB30NM50NSTB30NM60N
DescriptionMOSFET N-channel 600V, 25A FDMesh IIMOSFET N-ch 500 Volt 27Amp Power MDmeshIGBT Transistors MOSFET N-channel 600V, 25A Power II Mdmesh
ManufacturerSTMicroelectronicsSTMicroelectronicsST
Product CategoryMOSFETMOSFETIC Chips
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V500 V-
Id Continuous Drain Current25 A27 A-
Rds On Drain Source Resistance130 mOhms115 mOhms-
Vgs Gate Source Voltage25 V25 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation190 W190 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
SeriesSTB30NM60NDSTB30NM50N-
Transistor Type1 N-Channel1 N-Channel-
BrandSTMicroelectronicsSTMicroelectronics-
Fall Time75 ns60 ns-
Product TypeMOSFETMOSFET-
Rise Time50 ns20 ns-
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time110 ns115 ns-
Typical Turn On Delay Time20 ns23 ns-
Unit Weight0.139332 oz0.139332 oz-
Height-4.6 mm-
Length-10.4 mm-
Width-9.35 mm-
Hersteller Teil # Beschreibung RFQ
STMicroelectronics
STMicroelectronics
STB30NM60ND MOSFET N-channel 600V, 25A FDMesh II
STB30NM50N MOSFET N-ch 500 Volt 27Amp Power MDmesh
STB30NM60N IGBT Transistors MOSFET N-channel 600V, 25A Power II Mdmesh
STB30NM50N MOSFET N-CH 500V 27A D2PAK
STB30NM60ND MOSFET N-CH 600V 25A D2PAK
STB30NM60ND 30NM60ND Neu und Original
STB30NM60FD 30NM60FD Neu und Original
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