| PartNumber | STB30NM60ND | STB30NM50N | STB30NM60N |
| Description | MOSFET N-channel 600V, 25A FDMesh II | MOSFET N-ch 500 Volt 27Amp Power MDmesh | IGBT Transistors MOSFET N-channel 600V, 25A Power II Mdmesh |
| Manufacturer | STMicroelectronics | STMicroelectronics | ST |
| Product Category | MOSFET | MOSFET | IC Chips |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | 500 V | - |
| Id Continuous Drain Current | 25 A | 27 A | - |
| Rds On Drain Source Resistance | 130 mOhms | 115 mOhms | - |
| Vgs Gate Source Voltage | 25 V | 25 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 190 W | 190 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Series | STB30NM60ND | STB30NM50N | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Fall Time | 75 ns | 60 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 50 ns | 20 ns | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 110 ns | 115 ns | - |
| Typical Turn On Delay Time | 20 ns | 23 ns | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Height | - | 4.6 mm | - |
| Length | - | 10.4 mm | - |
| Width | - | 9.35 mm | - |