PartNumber | STB32N65M5 | STB32NM50N |
Description | MOSFET POWER MOSFET N-CH 650V | MOSFET N-Ch 500V 0.1 Ohm 22A MDmesh II |
Manufacturer | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | TO-263-3 | TO-263-3 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 650 V | 500 V |
Id Continuous Drain Current | 24 A | 22 A |
Rds On Drain Source Resistance | 95 mOhms | 130 mOhms |
Vgs th Gate Source Threshold Voltage | 4 V | 4 V |
Vgs Gate Source Voltage | 25 V | 25 V |
Qg Gate Charge | 72 nC | 62.5 nC |
Maximum Operating Temperature | + 150 C | - |
Pd Power Dissipation | 150 W | 190 W |
Configuration | Single | Single |
Tradename | MDmesh | MDmesh |
Packaging | Reel | Reel |
Series | STB32N65M5 | STB32NM50N |
Transistor Type | 1 N-Channel | 1 N-Channel |
Type | Power MOSFET | - |
Brand | STMicroelectronics | STMicroelectronics |
Fall Time | 16 ns | 23.6 ns |
Product Type | MOSFET | MOSFET |
Rise Time | 12 ns | 9.5 ns |
Factory Pack Quantity | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 56 ns | 110 ns |
Typical Turn On Delay Time | 53 ns | 21.5 ns |
Unit Weight | 0.139332 oz | 0.139332 oz |