STB45N6

STB45N60DM2AG vs STB45N65M5

 
PartNumberSTB45N60DM2AGSTB45N65M5
DescriptionMOSFET Automotive-grade N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in a D2PAK packageMOSFET N-Ch 650V 0.067 Ohm 35A MDmesh M5 MOS
ManufacturerSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseD2PAK-3TO-263-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V650 V
Id Continuous Drain Current34 A35 A
Rds On Drain Source Resistance93 mOhms78 mOhms
Vgs th Gate Source Threshold Voltage3 V-
Vgs Gate Source Voltage10 V-
Qg Gate Charge56 nC-
Minimum Operating Temperature- 55 C-
Maximum Operating Temperature+ 150 C-
Pd Power Dissipation250 W208 W
ConfigurationSingleSingle
Channel ModeEnhancement-
QualificationAEC-Q101-
TradenameMDmeshMDmesh
PackagingReelReel
Height4.6 mm-
Length10.4 mm-
ProductPower MOSFET-
SeriesSTB45N60DM2AGSTB45N65M5
Transistor Type1 N-Channel Power MOSFET1 N-Channel
TypeHigh Voltage-
Width9.35 mm-
BrandSTMicroelectronicsSTMicroelectronics
Fall Time6 ns-
Product TypeMOSFETMOSFET
Rise Time27 ns-
Factory Pack Quantity10001000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time85 ns-
Typical Turn On Delay Time29 ns-
Unit Weight0.139332 oz0.139332 oz
Hersteller Teil # Beschreibung RFQ
STMicroelectronics
STMicroelectronics
STB45N60DM2AG MOSFET Automotive-grade N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in a D2PAK package
STB45N65M5 MOSFET N-Ch 650V 0.067 Ohm 35A MDmesh M5 MOS
STB45N60DM2AG MOSFET N-CH 600V 34A
STB45N65M5 MOSFET N CH 650V 35A D2PAK
STB45N65M5-CUT TAPE Neu und Original
STB45N60DM2 Neu und Original
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