PartNumber | STB45N60DM2AG | STB45N65M5 |
Description | MOSFET Automotive-grade N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in a D2PAK package | MOSFET N-Ch 650V 0.067 Ohm 35A MDmesh M5 MOS |
Manufacturer | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | D2PAK-3 | TO-263-3 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 650 V |
Id Continuous Drain Current | 34 A | 35 A |
Rds On Drain Source Resistance | 93 mOhms | 78 mOhms |
Vgs th Gate Source Threshold Voltage | 3 V | - |
Vgs Gate Source Voltage | 10 V | - |
Qg Gate Charge | 56 nC | - |
Minimum Operating Temperature | - 55 C | - |
Maximum Operating Temperature | + 150 C | - |
Pd Power Dissipation | 250 W | 208 W |
Configuration | Single | Single |
Channel Mode | Enhancement | - |
Qualification | AEC-Q101 | - |
Tradename | MDmesh | MDmesh |
Packaging | Reel | Reel |
Height | 4.6 mm | - |
Length | 10.4 mm | - |
Product | Power MOSFET | - |
Series | STB45N60DM2AG | STB45N65M5 |
Transistor Type | 1 N-Channel Power MOSFET | 1 N-Channel |
Type | High Voltage | - |
Width | 9.35 mm | - |
Brand | STMicroelectronics | STMicroelectronics |
Fall Time | 6 ns | - |
Product Type | MOSFET | MOSFET |
Rise Time | 27 ns | - |
Factory Pack Quantity | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 85 ns | - |
Typical Turn On Delay Time | 29 ns | - |
Unit Weight | 0.139332 oz | 0.139332 oz |