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| PartNumber | STB4NK60ZT4 | STB4NK60Z-1 |
| Description | MOSFET N-Ch 600 Volt 4 Amp Zener SuperMESH | MOSFET N-Ch, 600V-1.76ohms Zener SuperMESH 4A |
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | Through Hole |
| Package / Case | TO-263-3 | TO-262-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V |
| Id Continuous Drain Current | 4 A | 4 A |
| Rds On Drain Source Resistance | 2 Ohms | 2 Ohms |
| Vgs Gate Source Voltage | 30 V | 30 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 70 W | 70 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | SuperMESH | SuperMESH |
| Packaging | Reel | Tube |
| Height | 4.6 mm | 8.95 mm |
| Length | 10.4 mm | 10 mm |
| Series | STB4NK60ZT4 | STB4NK60Z-1 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Type | MOSFET | - |
| Width | 9.35 mm | 4.4 mm |
| Brand | STMicroelectronics | STMicroelectronics |
| Fall Time | 16.5 ns | 16.5 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 9.5 ns | 9.5 ns |
| Factory Pack Quantity | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 29 ns | 29 ns |
| Typical Turn On Delay Time | 12 ns | 12 ns |
| Unit Weight | 0.139332 oz | 0.050717 oz |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
STMicroelectronics |
STB4NK60ZT4 | MOSFET N-Ch 600 Volt 4 Amp Zener SuperMESH | |
| STB4NK60Z-1 | MOSFET N-Ch, 600V-1.76ohms Zener SuperMESH 4A | ||
| STB4NK60ZT4 | MOSFET N-CH 600V 4A D2PAK | ||
| STB4NK60Z-1 | MOSFET N-CH 600V 4A I2PAK | ||
| STB4NK60Z | Neu und Original | ||
| STB4NK60Z-1,4NK60Z | Neu und Original | ||
| STB4NK60Z-1,B4NK60Z | Neu und Original | ||
| STB4NK60Z-1,B4NK60Z,STB4 | Neu und Original | ||
| STB4NK60Z-T4 | Neu und Original | ||
| STB4NK60Z1 | Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |