PartNumber | STB50NE10T4 | STB50NE08 | STB50NE10 |
Description | MOSFET N-Ch 100 Volt 50 Amp | 50 A, 100 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | |
Manufacturer | STMicroelectronics | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | TO-263-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 100 V | - | - |
Id Continuous Drain Current | 50 A | - | - |
Rds On Drain Source Resistance | 21 mOhms | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Minimum Operating Temperature | - 65 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 180 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Reel | - | - |
Height | 4.6 mm | - | - |
Length | 10.4 mm | - | - |
Series | STB50NE10 | - | - |
Transistor Type | 1 N-Channel | - | - |
Type | MOSFET | - | - |
Width | 9.35 mm | - | - |
Brand | STMicroelectronics | - | - |
Forward Transconductance Min | 35 S | - | - |
Fall Time | 35 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 100 ns | - | - |
Factory Pack Quantity | 1000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 45 ns | - | - |
Typical Turn On Delay Time | 25 ns | - | - |
Unit Weight | 0.139332 oz | - | - |