 | | | |
| PartNumber | STBV32-AP | STBV32-AP,STBV32,BV32, | STBV32-AP,STBV32-AP, |
| Description | RF Bipolar Transistors HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | ||
| Manufacturer | STMicroelectronics | - | - |
| Product Category | RF Bipolar Transistors | - | - |
| Series | STBV32 | - | - |
| Transistor Type | Bipolar | - | - |
| Technology | Si | - | - |
| Transistor Polarity | NPN | - | - |
| Collector Emitter Voltage VCEO Max | 400 V | - | - |
| Emitter Base Voltage VEBO | 9 V | - | - |
| Continuous Collector Current | 1.5 A | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Configuration | Single | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-92AP | - | - |
| DC Current Gain hFE Max | 20 | - | - |
| Height | 4.5 mm | - | - |
| Length | 4.8 mm | - | - |
| Type | RF Bipolar Small Signal | - | - |
| Width | 3.8 mm | - | - |
| Brand | STMicroelectronics | - | - |
| Maximum DC Collector Current | 1.5 A | - | - |
| Pd Power Dissipation | 1500 mW | - | - |
| Product Type | RF Bipolar Transistors | - | - |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | Transistors | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
STMicroelectronics |
STBV32-AP | RF Bipolar Transistors HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |
| STBV32-AP | RF Bipolar Transistors IGBT & Power Bipola | ||
| STBV32-AP,STBV32,BV32, | Neu und Original | ||
| STBV32-AP,STBV32-AP, | Neu und Original |