STD35NF0

STD35NF06LT4 vs STD35NF06T4

 
PartNumberSTD35NF06LT4STD35NF06T4
DescriptionMOSFET N-Ch 60 Volt 35 AmpMOSFET N-Ch 60 Volt 35 Amp
ManufacturerSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V60 V
Id Continuous Drain Current35 A35 A
Rds On Drain Source Resistance16 mOhms18 mOhms
Vgs Gate Source Voltage16 V20 V
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C
Pd Power Dissipation80 W55 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
QualificationAEC-Q101-
TradenameSTripFETSTripFET
PackagingReelReel
Height2.4 mm2.4 mm
Length6.6 mm6.6 mm
SeriesSTD35NF06LSTD35NF06
Transistor Type1 N-Channel1 N-Channel
TypeMOSFETMOSFET
Width6.2 mm6.2 mm
BrandSTMicroelectronicsSTMicroelectronics
Forward Transconductance Min28 S13 S
Fall Time20 ns15 ns
Product TypeMOSFETMOSFET
Rise Time100 ns8 ns
Factory Pack Quantity25002500
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time40 ns36 ns
Typical Turn On Delay Time20 ns16 ns
Unit Weight0.139332 oz0.139332 oz
Hersteller Teil # Beschreibung RFQ
STMicroelectronics
STMicroelectronics
STD35NF06LT4 MOSFET N-Ch 60 Volt 35 Amp
STD35NF06T4 MOSFET N-Ch 60 Volt 35 Amp
STD35NF06LT4 MOSFET N-CH 60V 35A DPAK
STD35NF06T4 MOSFET N-CH 60V 35A DPAK
STD35NF06 Neu und Original
STD35NF06L Power Field-Effect Transistor, 35A I(D), 60V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
STD35NF06LT Neu und Original
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