 | |  | |
| PartNumber | STD3NM60N | STD3NM60T4 | STD3NM60-1 |
| Description | MOSFET N-Ch 600 V 1.6 Ohm 3.3 A MDmesh II | MOSFET N-Ch 600 Volt 3 Amp Power MDmesh | MOSFET N-CH 600V 3A IPAK |
| Manufacturer | STMicroelectronics | STMicroelectronics | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | - |
| Id Continuous Drain Current | 2.5 A | 3 A | - |
| Rds On Drain Source Resistance | 1.8 Ohms | 1.5 Ohms | - |
| Pd Power Dissipation | 50 W | 42 W | - |
| Configuration | Single | Single | - |
| Tradename | MDmesh | - | - |
| Packaging | Reel | Reel | - |
| Series | STD3NM60N | STD3NM60 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Vgs Gate Source Voltage | - | 30 V | - |
| Minimum Operating Temperature | - | - 65 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Channel Mode | - | Enhancement | - |
| Height | - | 2.4 mm | - |
| Length | - | 6.6 mm | - |
| Type | - | MOSFET | - |
| Width | - | 6.2 mm | - |
| Forward Transconductance Min | - | 2.7 S | - |
| Fall Time | - | 10.5 ns | - |
| Rise Time | - | 4 ns | - |
| Typical Turn On Delay Time | - | 9 ns | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
STMicroelectronics |
STD3NM60N | MOSFET N-Ch 600 V 1.6 Ohm 3.3 A MDmesh II | |
| STD3NM60T4 | MOSFET N-Ch 600 Volt 3 Amp Power MDmesh | ||
| STD3NM60-1 | MOSFET N-CH 600V 3A IPAK | ||
| STD3NM60N | MOSFET N-CH 600V 3.3A DPAK | ||
| STD3NM60T4 | MOSFET N-CH 600V 3A DPAK | ||
| STD3NM60 | Neu und Original |