 |  |  | |
| PartNumber | STD8NM60N | STD8NM60N-1 | STD8NM60ND |
| Description | MOSFET N-Channel 600V Pwr Mosfet | MOSFET N-Channel 600V Pwr Mosfet | IGBT Transistors MOSFET N-Ch 600 Volt 7 Amp FDMesh |
| Manufacturer | STMicroelectronics | STMicroelectronics | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | Through Hole | - |
| Package / Case | TO-252-3 | TO-251-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | - |
| Id Continuous Drain Current | 7 A | 7 A | - |
| Rds On Drain Source Resistance | 650 mOhms | 650 mOhms | - |
| Vgs Gate Source Voltage | 25 V | 25 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 70 W | 70 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Tube | - |
| Height | 2.4 mm | 6.2 mm | - |
| Length | 6.6 mm | 6.6 mm | - |
| Series | STx8NM60N | STx8NM60N | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 6.2 mm | 2.4 mm | - |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Fall Time | 10 ns | 10 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 12 ns | 12 ns | - |
| Factory Pack Quantity | 2500 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 40 ns | 40 ns | - |
| Typical Turn On Delay Time | 10 ns | 10 ns | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
STMicroelectronics |
STD8NM60N | MOSFET N-Channel 600V Pwr Mosfet | |
| STD8NM60N-1 | MOSFET N-Channel 600V Pwr Mosfet | ||
| STD8NM60ND | IGBT Transistors MOSFET N-Ch 600 Volt 7 Amp FDMesh | ||
| STD8NM60N | MOSFET N-CH 600V 7A DPAK | ||
| STD8NM60N-1 | MOSFET N-CH 600V 7A IPAK |