PartNumber | STE53NC50 | STE50DE100 |
Description | MOSFET N-Ch 500 Volt 53 Amp | Bipolar Transistors - BJT POWER MOSFET |
Manufacturer | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | Bipolar Transistors - BJT |
RoHS | Y | Y |
Technology | Si | - |
Mounting Style | SMD/SMT | Through Hole |
Package / Case | ISOTOP-4 | ISOTOP |
Number of Channels | 1 Channel | - |
Transistor Polarity | N-Channel | NPN |
Vds Drain Source Breakdown Voltage | 500 V | - |
Id Continuous Drain Current | 53 A | - |
Rds On Drain Source Resistance | 80 mOhms | - |
Vgs Gate Source Voltage | 30 V | - |
Minimum Operating Temperature | - 65 C | - 40 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Pd Power Dissipation | 460 W | 160 W |
Configuration | Single | - |
Channel Mode | Enhancement | - |
Tradename | PowerMESH | - |
Packaging | Tube | Tube |
Height | 9.1 mm | - |
Length | 38.2 mm | - |
Series | STE53NC50 | STE50DE100 |
Transistor Type | 1 N-Channel | - |
Type | MOSFET | - |
Width | 25.5 mm | - |
Brand | STMicroelectronics | STMicroelectronics |
Forward Transconductance Min | 42 S | - |
Fall Time | 38 ns | - |
Product Type | MOSFET | BJTs - Bipolar Transistors |
Rise Time | 70 ns | - |
Factory Pack Quantity | 100 | 10 |
Subcategory | MOSFETs | Transistors |
Typical Turn On Delay Time | 46 ns | - |
Unit Weight | 1 oz | - |
DC Current Gain hFE Max | - | 13 |
DC Collector/Base Gain hfe Min | - | 3 |