STE5

STE53NC50 vs STE50DE100

 
PartNumberSTE53NC50STE50DE100
DescriptionMOSFET N-Ch 500 Volt 53 AmpBipolar Transistors - BJT POWER MOSFET
ManufacturerSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETBipolar Transistors - BJT
RoHSYY
TechnologySi-
Mounting StyleSMD/SMTThrough Hole
Package / CaseISOTOP-4ISOTOP
Number of Channels1 Channel-
Transistor PolarityN-ChannelNPN
Vds Drain Source Breakdown Voltage500 V-
Id Continuous Drain Current53 A-
Rds On Drain Source Resistance80 mOhms-
Vgs Gate Source Voltage30 V-
Minimum Operating Temperature- 65 C- 40 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation460 W160 W
ConfigurationSingle-
Channel ModeEnhancement-
TradenamePowerMESH-
PackagingTubeTube
Height9.1 mm-
Length38.2 mm-
SeriesSTE53NC50STE50DE100
Transistor Type1 N-Channel-
TypeMOSFET-
Width25.5 mm-
BrandSTMicroelectronicsSTMicroelectronics
Forward Transconductance Min42 S-
Fall Time38 ns-
Product TypeMOSFETBJTs - Bipolar Transistors
Rise Time70 ns-
Factory Pack Quantity10010
SubcategoryMOSFETsTransistors
Typical Turn On Delay Time46 ns-
Unit Weight1 oz-
DC Current Gain hFE Max-13
DC Collector/Base Gain hfe Min-3
Hersteller Teil # Beschreibung RFQ
STMicroelectronics
STMicroelectronics
STE53NC50 MOSFET N-Ch 500 Volt 53 Amp
STE50DE100 Bipolar Transistors - BJT POWER MOSFET
STE50DE100 TRANS NPN 1000V 50A ISOTOP
STE53NC50 MOSFET N-CH 500V 53A ISOTOP
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