 |  | | |
| PartNumber | STE60N105DK5 | STE6000-16T4MI-CUT TAPE | STE6000-16T4MIE3 |
| Description | Discrete Semiconductor Modules N-channel 1050 V, 0.110 Ohm typ., 46 A MDmesh DK5 Power MOSFET in an ISOTOP package | ||
| Manufacturer | STMicroelectronics | - | - |
| Product Category | Discrete Semiconductor Modules | - | - |
| RoHS | Y | - | - |
| Product | Power MOSFET Modules | - | - |
| Type | High Voltage | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Mounting Style | Screw Mount | - | - |
| Package / Case | ISOTOP-4 | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | STE60N105DK5 | - | - |
| Configuration | Single | - | - |
| Brand | STMicroelectronics | - | - |
| Transistor Polarity | N-Channel | - | - |
| Fall Time | 49.5 ns | - | - |
| Id Continuous Drain Current | 46 A | - | - |
| Operating Supply Voltage | 840 V | - | - |
| Pd Power Dissipation | 680 W | - | - |
| Product Type | Discrete Semiconductor Modules | - | - |
| Rds On Drain Source Resistance | 110 mOhms | - | - |
| Rise Time | 64.5 ns | - | - |
| Factory Pack Quantity | 100 | - | - |
| Subcategory | Discrete Semiconductor Modules | - | - |
| Tradename | MDmesh | - | - |
| Typical Turn Off Delay Time | 262 ns | - | - |
| Typical Turn On Delay Time | 40.6 ns | - | - |
| Vds Drain Source Breakdown Voltage | 1050 V | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
STMicroelectronics |
STE60N105DK5 | Discrete Semiconductor Modules N-channel 1050 V, 0.110 Ohm typ., 46 A MDmesh DK5 Power MOSFET in an ISOTOP package | |
| STE60N105DK5 | ISOTOP PARALL. | ||
| STE6000-16T4MI-CUT TAPE | Neu und Original | ||
| STE6000-16T4MIE3 | Neu und Original | ||
Vishay |
STE6000-16T4MI | Tantalum Capacitors - Wet 16volts 6000uF 20% T4 case size |