STF6N60 stock, STF6N60, STF6N60M2


PartNumber	STF6N60M2	STF6N60DM2	STF6N60
Description	MOSFET N-CH 600V 1.06Ohm 4.5A MDmesh M2	MOSFET
Manufacturer	STMicroelectronics	STMicroelectronics	STMicroelectronics
Product Category	MOSFET	MOSFET	Transistors - FETs, MOSFETs - Single
RoHS	Y	-	-
Technology	Si	Si	Si
Mounting Style	Through Hole	-	Through Hole
Package / Case	TO-220FP-3	-	-
Number of Channels	1 Channel	-	1 Channel
Transistor Polarity	N-Channel	-	N-Channel
Vds Drain Source Breakdown Voltage	600 V	-	-
Id Continuous Drain Current	4.5 A	-	-
Rds On Drain Source Resistance	1.2 Ohms	-	-
Vgs th Gate Source Threshold Voltage	2 V	-	-
Vgs Gate Source Voltage	10 V	-	-
Qg Gate Charge	8 nC	-	-
Minimum Operating Temperature	- 55 C	-	- 55 C
Maximum Operating Temperature	+ 150 C	-	+ 150 C
Pd Power Dissipation	20 W	-	-
Configuration	Single	-	Single
Channel Mode	Enhancement	-	-
Tradename	MDmesh	-	-
Packaging	Tube	-	Tube
Series	STF6N60M2	STF6N60DM2	MDmesh M2
Transistor Type	1 N-Channel Power MOSFET	-	1 N-Channel
Brand	STMicroelectronics	STMicroelectronics	-
Fall Time	22.5 ns	-	22.5 ns
Product Type	MOSFET	MOSFET	-
Rise Time	7.4 ns	-	7.4 nS
Factory Pack Quantity	1000	1000	-
Subcategory	MOSFETs	MOSFETs	-
Typical Turn Off Delay Time	24 ns	-	24 ns
Typical Turn On Delay Time	9.5 ns	-	9.5 ns
Unit Weight	0.011640 oz	-	0.011640 oz
Package Case	-	-	TO-220-3
Pd Power Dissipation	-	-	20 W
Vgs Gate Source Voltage	-	-	25 V
Id Continuous Drain Current	-	-	4.5 A
Vds Drain Source Breakdown Voltage	-	-	600 V
Vgs th Gate Source Threshold Voltage	-	-	3 V
Rds On Drain Source Resistance	-	-	1.06 Ohms
Qg Gate Charge	-	-	8 nC

Search Part Number : "STF6N60", Match & Start with "STF6N60" - Total : 4

Hersteller	Teil #	Beschreibung
STMicroelectronics	STF6N60M2	MOSFET N-CH 600V 1.06Ohm 4.5A MDmesh M2
	STF6N60DM2	MOSFET
	STF6N60M2	MOSFET N-CH 600V TO-220FP
	STF6N60	Neu und Original

STF6N60