PartNumber | STFI34NM60N | STFI31N65M5 | STFI34N65M5 |
Description | MOSFET N-channel 600 V 29A Mdmesh II 0.105 Ohm | MOSFET N-Ch 650 V 0.124 Ohm 22 A MDmesh(TM) M5 | IGBT Transistors MOSFET N-Ch 650 V 0.09 Ohm 28 A MDmesh(TM) V |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-281-3 | TO-281-3 | - |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 650 V | - |
Id Continuous Drain Current | 29 A | 22 A | - |
Rds On Drain Source Resistance | 105 mOhms | 124 mOhms | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 40 W | 30 W | - |
Configuration | Single | Single | Single |
Packaging | Tube | Tube | Tube |
Series | STFI34NM60N | STFI31N65M5 | MDmesh M5 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | STMicroelectronics | STMicroelectronics | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 1500 | 1500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Unit Weight | 0.079014 oz | 0.079014 oz | - |
Vgs th Gate Source Threshold Voltage | - | 4 V | - |
Vgs Gate Source Voltage | - | 25 V | - |
Qg Gate Charge | - | 45 nC | - |
Channel Mode | - | Enhancement | Enhancement |
Fall Time | - | 8.5 ns | 7.5 ns |
Rise Time | - | 8 ns | 8.7 ns |
Tradename | - | - | MDmesh |
Package Case | - | - | I2PAKFP-3 |
Pd Power Dissipation | - | - | 35 W |
Vgs Gate Source Voltage | - | - | 25 V |
Id Continuous Drain Current | - | - | 28 A |
Vds Drain Source Breakdown Voltage | - | - | 650 V |
Vgs th Gate Source Threshold Voltage | - | - | 3 V |
Rds On Drain Source Resistance | - | - | 90 mOhms |
Qg Gate Charge | - | - | 62.5 nC |