STFI3

STFI34NM60N vs STFI31N65M5 vs STFI34N65M5

 
PartNumberSTFI34NM60NSTFI31N65M5STFI34N65M5
DescriptionMOSFET N-channel 600 V 29A Mdmesh II 0.105 OhmMOSFET N-Ch 650 V 0.124 Ohm 22 A MDmesh(TM) M5IGBT Transistors MOSFET N-Ch 650 V 0.09 Ohm 28 A MDmesh(TM) V
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-281-3TO-281-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V650 V-
Id Continuous Drain Current29 A22 A-
Rds On Drain Source Resistance105 mOhms124 mOhms-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation40 W30 W-
ConfigurationSingleSingleSingle
PackagingTubeTubeTube
SeriesSTFI34NM60NSTFI31N65M5MDmesh M5
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandSTMicroelectronicsSTMicroelectronics-
Product TypeMOSFETMOSFET-
Factory Pack Quantity15001500-
SubcategoryMOSFETsMOSFETs-
Unit Weight0.079014 oz0.079014 oz-
Vgs th Gate Source Threshold Voltage-4 V-
Vgs Gate Source Voltage-25 V-
Qg Gate Charge-45 nC-
Channel Mode-EnhancementEnhancement
Fall Time-8.5 ns7.5 ns
Rise Time-8 ns8.7 ns
Tradename--MDmesh
Package Case--I2PAKFP-3
Pd Power Dissipation--35 W
Vgs Gate Source Voltage--25 V
Id Continuous Drain Current--28 A
Vds Drain Source Breakdown Voltage--650 V
Vgs th Gate Source Threshold Voltage--3 V
Rds On Drain Source Resistance--90 mOhms
Qg Gate Charge--62.5 nC
Hersteller Teil # Beschreibung RFQ
STMicroelectronics
STMicroelectronics
STFI34NM60N MOSFET N-channel 600 V 29A Mdmesh II 0.105 Ohm
STFI31N65M5 MOSFET N-Ch 650 V 0.124 Ohm 22 A MDmesh(TM) M5
STFI34N65M5 IGBT Transistors MOSFET N-Ch 650 V 0.09 Ohm 28 A MDmesh(TM) V
STFI31N65M5 RF Bipolar Transistors MOSFET N-Ch 650 V 0.124 Ohm 22 A MDmesh(TM) V
STFI34NM60N MOSFET N-CH 600V 29A I2PAK FP
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