STGB1

STGB18N40LZT4 vs STGB19N40LZ vs STGB18N40LZ-1

 
PartNumberSTGB18N40LZT4STGB19N40LZSTGB18N40LZ-1
DescriptionIGBT Transistors EAS 180 mJ-400 VIGBT TransistorsIGBT Transistors EAS 180 mJ-400V IGBT
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryIGBT TransistorsIGBT TransistorsIGBT Transistors
RoHSY-Y
TechnologySiSiSi
Package / CaseD2PAK-3-I2PAK-3
Mounting StyleSMD/SMT-SMD/SMT
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max360 V-360 V
Maximum Gate Emitter Voltage12 V-12 V
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
SeriesSTGB18N40LZT4STGB19N40LZSTGB18N40LZ-1
QualificationAEC-Q101AEC-Q100-
PackagingReel-Tube
Continuous Collector Current Ic Max30 A-30 A
Height4.6 mm-9.35 mm
Length10.4 mm-10.4 mm
Width9.35 mm-4.6 mm
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product TypeIGBT TransistorsIGBT TransistorsIGBT Transistors
Factory Pack Quantity1000100050
SubcategoryIGBTsIGBTsIGBTs
Unit Weight0.079014 oz-0.084199 oz
Hersteller Teil # Beschreibung RFQ
STMicroelectronics
STMicroelectronics
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