STGB7N

STGB7NB60KDT4 vs STGB7NB40LZT4 vs STGB7NB60HDT4

 
PartNumberSTGB7NB60KDT4STGB7NB40LZT4STGB7NB60HDT4
DescriptionIGBT Transistors N-Ch 600 Volt 7 AmpIGBT 430V 14A 100W D2PAKIGBT 600V 14A 80W D2PAK
ManufacturerSTMicroelectronics-STMicroelectronics
Product CategoryIGBT Transistors-IGBTs - Single
RoHSY--
TechnologySi--
Package / CaseD2PAK-3--
Mounting StyleSMD/SMT--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2.8 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C14 A--
Pd Power Dissipation80 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesSTGB7NB60KD-PowerMESH
PackagingReel-Cut Tape (CT)
Continuous Collector Current Ic Max14 A--
Height4.6 mm--
Length10.4 mm--
Width9.35 mm--
BrandSTMicroelectronics--
Continuous Collector Current7 A--
Gate Emitter Leakage Current+/- 100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity1000--
SubcategoryIGBTs--
Unit Weight0.079014 oz--
Package Case--TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Input Type--Standard
Mounting Type--Surface Mount
Supplier Device Package--D2PAK
Power Max--80W
Reverse Recovery Time trr--100ns
Current Collector Ic Max--14A
Voltage Collector Emitter Breakdown Max--600V
IGBT Type---
Current Collector Pulsed Icm--56A
Vce on Max Vge Ic--2.8V @ 15V, 7A
Switching Energy--85μJ (off)
Gate Charge--42nC
Td on off 25°C--15ns/75ns
Test Condition--480V, 7A, 10 Ohm, 15V
Hersteller Teil # Beschreibung RFQ
STMicroelectronics
STMicroelectronics
STGB7NC60HDT4 IGBT Transistors N-Ch 600 Volt 14 Amp
STGB7NB60KDT4 IGBT Transistors N-Ch 600 Volt 7 Amp
STGB7NC60HT4 IGBT Transistors IGBT 600 V Power Bipolar D2PAK Trans
STGB7NC60HDT4 IGBT 600V 25A 80W D2PAK
STGB7NB40LZT4 IGBT 430V 14A 100W D2PAK
STGB7NB60HDT4 IGBT 600V 14A 80W D2PAK
STGB7NB40LZ Neu und Original
STGB7NB60 Neu und Original
STGB7NB60HD Neu und Original
STGB7NB60K Neu und Original
STGB7NC60HD Neu und Original
STGB7NC60HDT4,GB7NC60HDT Neu und Original
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