STGD5

STGD5H60DF vs STGD5NB120SZT4 vs STGD5NB120SZ-1

 
PartNumberSTGD5H60DFSTGD5NB120SZT4STGD5NB120SZ-1
DescriptionIGBT Transistors Trench gate field-stop IGBT, H series 600 V, 5 A high speedIGBT Transistors N-Ch 1200 Volt 5 AmpIGBT Transistors 5 A 1200V LOW DROP INTERN CLAMPED IGBT
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryIGBT TransistorsIGBT TransistorsIGBT Transistors
RoHSYYY
TechnologySiSiSi
Package / CaseDPAK-3TO-252-3IPAK-3
Mounting StyleSMD/SMTSMD/SMTThrough Hole
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max600 V1200 V1200 V
Collector Emitter Saturation Voltage1.5 V2 V-
Maximum Gate Emitter Voltage20 V20 V20 V
Continuous Collector Current at 25 C10 A10 A-
Pd Power Dissipation83 W55 W-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 150 C+ 150 C
SeriesSTGD5H60DFSTGD5NB120SZSTGD5NB120SZ
PackagingReelReelTube
Continuous Collector Current Ic Max10 A10 A10 A
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Continuous Collector Current5 A5 A-
Gate Emitter Leakage Current+/- 250 nA+/- 100 nA-
Product TypeIGBT TransistorsIGBT TransistorsIGBT Transistors
Factory Pack Quantity250025003000
SubcategoryIGBTsIGBTsIGBTs
Height-2.4 mm6.2 mm
Length-6.6 mm6.6 mm
Width-6.2 mm2.4 mm
Unit Weight-0.139332 oz0.139332 oz
Hersteller Teil # Beschreibung RFQ
STMicroelectronics
STMicroelectronics
STGD5H60DF IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 5 A high speed
STGD5NB120SZT4 IGBT Transistors N-Ch 1200 Volt 5 Amp
STGD5NB120SZ-1 IGBT Transistors 5 A 1200V LOW DROP INTERN CLAMPED IGBT
STGD5NB120SZ-1 IGBT Transistors 5 A 1200V LOW DROP INTERN CLAMPED IGBT
STGD5NB120SZT4 IGBT Transistors N-Ch 1200 Volt 5 Amp
STGD5H60DF TRENCH GATE FIELD-STOP IGBT, H S
STGD5H60DF-CUT TAPE Neu und Original
STGD5NB120SZT4-CUT TAPE Neu und Original
STGD5H60DFSF Neu und Original
STGD5NB120S Neu und Original
STGD5NB120SZ Neu und Original
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