PartNumber | STGD5H60DF | STGD5NB120SZT4 | STGD5NB120SZ-1 |
Description | IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 5 A high speed | IGBT Transistors N-Ch 1200 Volt 5 Amp | IGBT Transistors 5 A 1200V LOW DROP INTERN CLAMPED IGBT |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Package / Case | DPAK-3 | TO-252-3 | IPAK-3 |
Mounting Style | SMD/SMT | SMD/SMT | Through Hole |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 600 V | 1200 V | 1200 V |
Collector Emitter Saturation Voltage | 1.5 V | 2 V | - |
Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
Continuous Collector Current at 25 C | 10 A | 10 A | - |
Pd Power Dissipation | 83 W | 55 W | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 150 C | + 150 C |
Series | STGD5H60DF | STGD5NB120SZ | STGD5NB120SZ |
Packaging | Reel | Reel | Tube |
Continuous Collector Current Ic Max | 10 A | 10 A | 10 A |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Continuous Collector Current | 5 A | 5 A | - |
Gate Emitter Leakage Current | +/- 250 nA | +/- 100 nA | - |
Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 2500 | 2500 | 3000 |
Subcategory | IGBTs | IGBTs | IGBTs |
Height | - | 2.4 mm | 6.2 mm |
Length | - | 6.6 mm | 6.6 mm |
Width | - | 6.2 mm | 2.4 mm |
Unit Weight | - | 0.139332 oz | 0.139332 oz |