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| PartNumber | STGP14NC60KD | STGP14N60D |
| Description | IGBT Transistors PowerMESH" IGBT | IGBT Transistors 14A 600V SHRT CIR RUGGED IGBT |
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Category | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y |
| Technology | Si | Si |
| Package / Case | TO-220-3 | - |
| Mounting Style | Through Hole | Through Hole |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | 600 V | 600 V |
| Collector Emitter Saturation Voltage | 2 V | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V |
| Continuous Collector Current at 25 C | 11 A | 25 A |
| Pd Power Dissipation | 28 W | - |
| Minimum Operating Temperature | - 55 C | - 40 C |
| Maximum Operating Temperature | + 150 C | + 175 C |
| Series | STGP14NC60KD | STGP14N60D |
| Packaging | Tube | Tube |
| Continuous Collector Current Ic Max | 7 A | - |
| Height | 9.15 mm | - |
| Length | 10.4 mm | - |
| Width | 4.6 mm | - |
| Brand | STMicroelectronics | STMicroelectronics |
| Continuous Collector Current | 14 A | - |
| Gate Emitter Leakage Current | 150 uA | - |
| Product Type | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 1000 | 1000 |
| Subcategory | IGBTs | IGBTs |
| Unit Weight | 0.211644 oz | - |