STGW30N1

STGW30N120KD vs STGW30N120KD GW30N120KD vs STGW30N120DI

 
PartNumberSTGW30N120KDSTGW30N120KD GW30N120KDSTGW30N120DI
DescriptionIGBT Transistors 30 A - 1200 V Rugged IGBT
ManufacturerSTMicroelectronics--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max1200 V--
Maximum Gate Emitter Voltage25 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 125 C--
SeriesSTGW30N120KD--
PackagingTube--
Continuous Collector Current Ic Max60 A--
Height20.15 mm--
Length15.75 mm--
Width5.15 mm--
BrandSTMicroelectronics--
Product TypeIGBT Transistors--
Factory Pack Quantity30--
SubcategoryIGBTs--
Unit Weight1.340411 oz--
Hersteller Teil # Beschreibung RFQ
STMicroelectronics
STMicroelectronics
STGW30N120KD IGBT Transistors 30 A - 1200 V Rugged IGBT
STGW30N120KD IGBT Transistors 30 A - 1200 V Rugged IGBT
STGW30N120KD GW30N120KD Neu und Original
STGW30N120DI Neu und Original
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