PartNumber | STGW39NC60VD | STGW39NC60VD GW39NC60VD | STGW39NC60VD,GW39NC60VD, |
Description | IGBT Transistors N-CHANNEL MFT | ||
Manufacturer | STMicroelectronics | - | - |
Product Category | IGBT Transistors | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Package / Case | TO-247-3 | - | - |
Mounting Style | Through Hole | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 600 V | - | - |
Collector Emitter Saturation Voltage | 1.8 V/1.7 V | - | - |
Maximum Gate Emitter Voltage | 20 V | - | - |
Pd Power Dissipation | 250 W | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Series | STGW39NC60VD | - | - |
Packaging | Tube | - | - |
Continuous Collector Current Ic Max | 80 A | - | - |
Height | 20.15 mm | - | - |
Length | 15.75 mm | - | - |
Width | 5.15 mm | - | - |
Brand | STMicroelectronics | - | - |
Continuous Collector Current | 70 A | - | - |
Gate Emitter Leakage Current | +/- 100 nA | - | - |
Product Type | IGBT Transistors | - | - |
Factory Pack Quantity | 600 | - | - |
Subcategory | IGBTs | - | - |
Unit Weight | 1.340411 oz | - | - |