STGW39NC60VD

STGW39NC60VD vs STGW39NC60VD GW39NC60VD vs STGW39NC60VD,GW39NC60VD,

 
PartNumberSTGW39NC60VDSTGW39NC60VD GW39NC60VDSTGW39NC60VD,GW39NC60VD,
DescriptionIGBT Transistors N-CHANNEL MFT
ManufacturerSTMicroelectronics--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.8 V/1.7 V--
Maximum Gate Emitter Voltage20 V--
Pd Power Dissipation250 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesSTGW39NC60VD--
PackagingTube--
Continuous Collector Current Ic Max80 A--
Height20.15 mm--
Length15.75 mm--
Width5.15 mm--
BrandSTMicroelectronics--
Continuous Collector Current70 A--
Gate Emitter Leakage Current+/- 100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity600--
SubcategoryIGBTs--
Unit Weight1.340411 oz--
Hersteller Teil # Beschreibung RFQ
STMicroelectronics
STMicroelectronics
STGW39NC60VD IGBT Transistors N-CHANNEL MFT
STGW39NC60VD IGBT 600V 80A 250W TO247
STGW39NC60VD GW39NC60VD Neu und Original
STGW39NC60VD,GW39NC60VD, Neu und Original
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