STH12

STH12N120K5-2 vs STH12N60 vs STH12N60FI

 
PartNumberSTH12N120K5-2STH12N60STH12N60FI
DescriptionMOSFET N-channel 1200 V, 0.62 Ohm typ., 12 A MDmesh K5 Power MOSFET in H2PAK-2 package
ManufacturerSTMicroelectronics-ST
Product CategoryMOSFET-IC Chips
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseH2PAK-2--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage1.2 kV--
Id Continuous Drain Current12 A--
Rds On Drain Source Resistance620 mOhms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge44.2 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation250 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
SeriesSTH12N120K5-2--
Transistor Type1 N-Channel--
BrandSTMicroelectronics--
Fall Time18.5 ns--
Product TypeMOSFET--
Rise Time11 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time68.5 ns--
Typical Turn On Delay Time23 ns--
Unit Weight0.139332 oz--
Hersteller Teil # Beschreibung RFQ
STMicroelectronics
STMicroelectronics
STH12N120K5-2 MOSFET N-channel 1200 V, 0.62 Ohm typ., 12 A MDmesh K5 Power MOSFET in H2PAK-2 package
STH12N120K5-2 MOSFET N-CH 1200V 12A H2PAK-2
STH12N60 Neu und Original
STH12N60FI Neu und Original
STH12NA60 Neu und Original
STH12NA60FI Neu und Original
STH12R06FP Neu und Original
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