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| PartNumber | STH180N10F3-2 | STH180N4F6-2 | STH180N10F3-6 |
| Description | MOSFET N-Ch 100V 3.9 mOhm 180A STripFET | MOSFET | IGBT Transistors MOSFET N-ch 100V 3.9 Ohm 180A STripFET III |
| Manufacturer | STMicroelectronics | STMicroelectronics | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | H2PAK-2 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 120 A | - | - |
| Rds On Drain Source Resistance | 4.5 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 114.6 nC | - | - |
| Pd Power Dissipation | 315 W | - | - |
| Configuration | Single | - | - |
| Tradename | STripFET | - | - |
| Packaging | Reel | - | - |
| Series | STH180N10F3-2 | STH180N4F6 | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Fall Time | 6.9 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 97.1 ns | - | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.139332 oz | - | - |