 |  | |
| PartNumber | STI6N95K5 | STI6N90K5 |
| Description | MOSFET N-Ch 950V 1 Ohm 9A Zener 5 Power | MOSFET N-channel 900 V, 0.91 Ohm typ., 6 A MDmesh K5 Power MOSFET in an I2PAK package |
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-262-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 950 V | 900 V |
| Id Continuous Drain Current | 9 A | 6 A |
| Rds On Drain Source Resistance | 1 Ohms | 910 mOhms |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Tube | - |
| Series | STI6N95K5 | STI6N90K5 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | STMicroelectronics | STMicroelectronics |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Unit Weight | 0.063493 oz | 0.052911 oz |
| Vgs th Gate Source Threshold Voltage | - | 3 V |
| Vgs Gate Source Voltage | - | 30 V |
| Qg Gate Charge | - | 11 nC |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Pd Power Dissipation | - | 110 W |
| Tradename | - | MDmesh |
| Fall Time | - | 15.5 ns |
| Rise Time | - | 12.2 ns |
| Typical Turn Off Delay Time | - | 30.4 ns |
| Typical Turn On Delay Time | - | 12.4 ns |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
STMicroelectronics |
STI6N95K5 | MOSFET N-Ch 950V 1 Ohm 9A Zener 5 Power | |
| STI6N90K5 | MOSFET N-channel 900 V, 0.91 Ohm typ., 6 A MDmesh K5 Power MOSFET in an I2PAK package | ||
| STI6N90K5 | N-CHANNEL 900 V, 2.1 OHM TYP., 3 | ||
| STI6N95K5 | NCHANNEL 950V ZENER POWER MOSFET | ||
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