STI15

STI150N10F7 vs STI15NM60ND vs STI15NM60N

 
PartNumberSTI150N10F7STI15NM60NDSTI15NM60N
DescriptionMOSFET N-channel 100 V, 0.0036 Ohm typ., 110 A STripFET F7 Power MOSFET in I2PAK packageMOSFET N-CH 600V 14A I2PAKMOSFET N-CH 600V 14A I2PAK
ManufacturerSTMicroelectronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-262-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current110 A--
Rds On Drain Source Resistance4.2 mOhms--
Vgs th Gate Source Threshold Voltage4.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge117 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation250 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameSTripFET--
PackagingTube--
SeriesSTI150N10F7--
Transistor Type1 N-Channel--
BrandSTMicroelectronics--
Fall Time33 ns--
Product TypeMOSFET--
Rise Time57 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time72 ns--
Typical Turn On Delay Time33 ns--
Unit Weight0.073511 oz--
Hersteller Teil # Beschreibung RFQ
STMicroelectronics
STMicroelectronics
STI150N10F7 MOSFET N-channel 100 V, 0.0036 Ohm typ., 110 A STripFET F7 Power MOSFET in I2PAK package
STI15NM60ND MOSFET N-CH 600V 14A I2PAK
STI150N10F7 MOSFET N-CH 100V 110A I2PAK
STI15NM60N MOSFET N-CH 600V 14A I2PAK
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