 | | |
| PartNumber | STI35N65M5 | STI360N4F6 |
| Description | MOSFET Nchannel 650 V 0.085 Ohm, 27 A, MDmesh | MOSFET N-channel 40 V 120 A STripFET Pwr MOSFET |
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-262-3 | TO-262-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 40 V |
| Id Continuous Drain Current | 27 A | 120 A |
| Rds On Drain Source Resistance | 98 mOhms | 1.8 mOhms |
| Vgs Gate Source Voltage | 25 V | 20 V |
| Qg Gate Charge | 83 nC | 340 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 175 C |
| Pd Power Dissipation | 160 W | 300 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Tube | Tube |
| Series | STI35N65M5 | STI360N4F6 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | STMicroelectronics | STMicroelectronics |
| Fall Time | 16 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 12 ns | - |
| Factory Pack Quantity | 50 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 60 ns | - |
| Unit Weight | 0.050717 oz | 0.050717 oz |
| Vgs th Gate Source Threshold Voltage | - | 4.5 V |
| Qualification | - | AEC-Q101 |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
STMicroelectronics |
STI35N65M5 | MOSFET Nchannel 650 V 0.085 Ohm, 27 A, MDmesh | |
| STI360N4F6 | MOSFET N-channel 40 V 120 A STripFET Pwr MOSFET | ||
| STI35N65M5 | IGBT Transistors MOSFET Nchannel 650 V 0.085 Ohm, 27 A, MDmesh | ||
| STI360N4F6 | MOSFET N-CH 40V 120A I2PAK | ||
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| STI3520ACV MALTA | Neu und Original | ||
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