STL220

STL220N6F7 vs STL220N3LLH7-CUT TAPE vs STL220N3LLH7

 
PartNumberSTL220N6F7STL220N3LLH7-CUT TAPESTL220N3LLH7
DescriptionMOSFET N-channel 60 V, 0.0012 Ohm typ., 260 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 packageMOSFET N-CH 30V 220A POWERFLAT56
ManufacturerSTMicroelectronics-STMicroelectronics
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CasePowerFLAT-5x6-8--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current260 A--
Rds On Drain Source Resistance1.2 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge100 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 150 C
Pd Power Dissipation187 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
TradenameSTripFET--
SeriesSTL220N6F7-N-channel STripFET
Transistor Type1 N-Channel-1 N-Channel
BrandSTMicroelectronics--
Fall Time38ns-51 ns
Product TypeMOSFET--
Rise Time43 ns-115 ns
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time66 ns-70 ns
Typical Turn On Delay Time34 ns-55 ns
Packaging--Reel
Package Case--PowerFlat-8
Pd Power Dissipation--4 W
Vgs Gate Source Voltage--+/- 20 V
Id Continuous Drain Current--50 A
Vds Drain Source Breakdown Voltage--30 V
Vgs th Gate Source Threshold Voltage--2.2 V
Rds On Drain Source Resistance--1.1 mOhms
Qg Gate Charge--46 nC
Hersteller Teil # Beschreibung RFQ
STMicroelectronics
STMicroelectronics
STL220N6F7 MOSFET N-channel 60 V, 0.0012 Ohm typ., 260 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package
STL220N6F7 MOSFET POWER MOSFET
STL220N3LLH7 MOSFET N-CH 30V 220A POWERFLAT56
STL220N3LLH7-CUT TAPE Neu und Original
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