STL7NM

STL7NM60N vs STL7NM62N vs STL7NM62NY5

 
PartNumberSTL7NM60NSTL7NM62NSTL7NM62NY5
DescriptionMOSFET N-Ch 600V 5.8A 0.805 Second Gen MDmesh
ManufacturerSTMicroelectronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePowerFLAT-5x5-14--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current5.8 A--
Rds On Drain Source Resistance805 mOhms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage25 V--
Qg Gate Charge14 nC--
Pd Power Dissipation4 W--
PackagingReel--
SeriesSTL7NM60N--
BrandSTMicroelectronics--
Fall Time12 ns--
Product TypeMOSFET--
Rise Time10 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Hersteller Teil # Beschreibung RFQ
STMicroelectronics
STMicroelectronics
STL7NM60N MOSFET N-Ch 600V 5.8A 0.805 Second Gen MDmesh
STL7NM60N IGBT Transistors MOSFET N-Ch 600V 5.8A 0.805 Second Gen MDmesh
STL7NM62N Neu und Original
STL7NM62NY5 Neu und Original
STL7NM68N Neu und Original
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