 | | |
| PartNumber | STP10NM60N | STP10NM60ND |
| Description | MOSFET N-channel 600 V Mdmesh 8A | MOSFET N-Ch 600V 0.57 Ohm 8A FDmesh II PWR |
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 650 V |
| Id Continuous Drain Current | 10 A | 8 A |
| Rds On Drain Source Resistance | 550 mOhms | 600 mOhms |
| Vgs Gate Source Voltage | 25 V | 25 V |
| Qg Gate Charge | 19 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 70 W | 70 W |
| Configuration | Single | Single |
| Tradename | MDmesh | - |
| Packaging | Tube | Tube |
| Series | STP10NM60N | STP10NM60ND |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | STMicroelectronics | STMicroelectronics |
| Fall Time | 15 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 12 ns | - |
| Factory Pack Quantity | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 32 ns | - |
| Typical Turn On Delay Time | 10 ns | - |
| Unit Weight | 0.011640 oz | 0.011640 oz |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
STMicroelectronics |
STP10NM60N | MOSFET N-channel 600 V Mdmesh 8A | |
| STP10NM60ND | MOSFET N-Ch 600V 0.57 Ohm 8A FDmesh II PWR | ||
| STP10NM60N | Darlington Transistors MOSFET N-channel 600 V Mdmesh 8A | ||
| STP10NM60ND | MOSFET N-CH 600V 8A TO-220 | ||
| STP10NM60N,10NM60N | Neu und Original |