STP110N8

STP110N8F7 vs STP110N8F6

 
PartNumberSTP110N8F7STP110N8F6
DescriptionMOSFET N-channel 80 V, 6.4 mOhm typ., 80 A STripFET F7 Power MOSFET in a TO-220 packageMOSFET N-channel 80 V, 0.0056 Ohm typ., 110 A, STripFET F6 Power MOSFET in a TO-220 package
ManufacturerSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleThrough HoleThrough Hole
Package / CaseTO-220-3TO-220-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage80 V80 V
Id Continuous Drain Current80 A110 A
Rds On Drain Source Resistance7.5 mOhms6.5 mOhms
Vgs th Gate Source Threshold Voltage2.5 V2.5 V
Vgs Gate Source Voltage20 V10 V
Qg Gate Charge46.8 nC150 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C
Pd Power Dissipation170 W200 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
TradenameSTripFETSTripFET
SeriesSTP110N8F7STP110N8F6
Transistor Type1 N-Channel1 N-Channel Power MOSFET
BrandSTMicroelectronicsSTMicroelectronics
Fall Time32 ns48 ns
Product TypeMOSFETMOSFET
Rise Time95 ns61 ns
Factory Pack Quantity10001000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time60 ns162 ns
Typical Turn On Delay Time49 ns24 ns
Unit Weight0.079014 oz0.011640 oz
Height-15.75 mm
Length-10.4 mm
Width-4.6 mm
Hersteller Teil # Beschreibung RFQ
STMicroelectronics
STMicroelectronics
STP110N8F7 MOSFET N-channel 80 V, 6.4 mOhm typ., 80 A STripFET F7 Power MOSFET in a TO-220 package
STP110N8F6 MOSFET N-channel 80 V, 0.0056 Ohm typ., 110 A, STripFET F6 Power MOSFET in a TO-220 package
STP110N8F6 MOSFET N-CH 80V 110A TO-220
STP110N8F7 MOSFET N-CH 80V 80A TO-220
STP110N8F6 110N8F6 Neu und Original
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