PartNumber | STP110N8F7 | STP110N8F6 |
Description | MOSFET N-channel 80 V, 6.4 mOhm typ., 80 A STripFET F7 Power MOSFET in a TO-220 package | MOSFET N-channel 80 V, 0.0056 Ohm typ., 110 A, STripFET F6 Power MOSFET in a TO-220 package |
Manufacturer | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 80 V | 80 V |
Id Continuous Drain Current | 80 A | 110 A |
Rds On Drain Source Resistance | 7.5 mOhms | 6.5 mOhms |
Vgs th Gate Source Threshold Voltage | 2.5 V | 2.5 V |
Vgs Gate Source Voltage | 20 V | 10 V |
Qg Gate Charge | 46.8 nC | 150 nC |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C |
Pd Power Dissipation | 170 W | 200 W |
Configuration | Single | Single |
Channel Mode | Enhancement | Enhancement |
Tradename | STripFET | STripFET |
Series | STP110N8F7 | STP110N8F6 |
Transistor Type | 1 N-Channel | 1 N-Channel Power MOSFET |
Brand | STMicroelectronics | STMicroelectronics |
Fall Time | 32 ns | 48 ns |
Product Type | MOSFET | MOSFET |
Rise Time | 95 ns | 61 ns |
Factory Pack Quantity | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 60 ns | 162 ns |
Typical Turn On Delay Time | 49 ns | 24 ns |
Unit Weight | 0.079014 oz | 0.011640 oz |
Height | - | 15.75 mm |
Length | - | 10.4 mm |
Width | - | 4.6 mm |