STP11N6

STP11N65M2 vs STP11N65M5 vs STP11N60DM2

 
PartNumberSTP11N65M2STP11N65M5STP11N60DM2
DescriptionMOSFET N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in TO-220 packageMOSFET N-Ch 650V 0.43 Ohm 9A MDmeshV 710VMOSFET N-channel 600 V, 0.370 Ohm typ., 10 A MDmesh DM2 Power MOSFET in a TO-220 package
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220-3TO-220-3TO-220-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage650 V650 V600 V
Id Continuous Drain Current7 A9 A10 A
Rds On Drain Source Resistance670 mOhms480 mOhms370 mOhms
Vgs th Gate Source Threshold Voltage3 V-3 V
Vgs Gate Source Voltage25 V-25 V
Qg Gate Charge12.5 nC-16.5 nC
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation85 W85 W110 W
ConfigurationSingleSingleSingle
TradenameMDmesh II PlusMDmeshMDmesh
PackagingTubeTube-
ProductPower MOSFET--
SeriesSTP11N65M2STP11N65M5STP11N60DM2
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Fall Time15 ns-9.5 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time7.5 ns-6.3 ns
Factory Pack Quantity100010001000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time26 ns-31 ns
Typical Turn On Delay Time9.5 ns-11.7 ns
Unit Weight0.011640 oz0.011640 oz0.067021 oz
Channel Mode--Enhancement
Hersteller Teil # Beschreibung RFQ
STMicroelectronics
STMicroelectronics
STP11N65M2 MOSFET N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in TO-220 package
STP11N65M5 MOSFET N-Ch 650V 0.43 Ohm 9A MDmeshV 710V
STP11N60DM2 MOSFET N-channel 600 V, 0.370 Ohm typ., 10 A MDmesh DM2 Power MOSFET in a TO-220 package
STP11N65M2 MOSFET N-CH 650V 7A TO-220AB
STP11N60DM2 N-CHANNEL 600 V, 0.26 OHM TYP.,
STP11N65M5 MOSFET N CH 650V 9A TO-220
STP11N60C2 Neu und Original
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