PartNumber | STP11N65M2 | STP11N65M5 | STP11N60DM2 |
Description | MOSFET N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in TO-220 package | MOSFET N-Ch 650V 0.43 Ohm 9A MDmeshV 710V | MOSFET N-channel 600 V, 0.370 Ohm typ., 10 A MDmesh DM2 Power MOSFET in a TO-220 package |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 650 V | 650 V | 600 V |
Id Continuous Drain Current | 7 A | 9 A | 10 A |
Rds On Drain Source Resistance | 670 mOhms | 480 mOhms | 370 mOhms |
Vgs th Gate Source Threshold Voltage | 3 V | - | 3 V |
Vgs Gate Source Voltage | 25 V | - | 25 V |
Qg Gate Charge | 12.5 nC | - | 16.5 nC |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Pd Power Dissipation | 85 W | 85 W | 110 W |
Configuration | Single | Single | Single |
Tradename | MDmesh II Plus | MDmesh | MDmesh |
Packaging | Tube | Tube | - |
Product | Power MOSFET | - | - |
Series | STP11N65M2 | STP11N65M5 | STP11N60DM2 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Fall Time | 15 ns | - | 9.5 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 7.5 ns | - | 6.3 ns |
Factory Pack Quantity | 1000 | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 26 ns | - | 31 ns |
Typical Turn On Delay Time | 9.5 ns | - | 11.7 ns |
Unit Weight | 0.011640 oz | 0.011640 oz | 0.067021 oz |
Channel Mode | - | - | Enhancement |