 |  | | |
| PartNumber | STP11NM80 | STP11NM80 P11NM80 | STP11NM80,P11NM80,STP11N |
| Description | MOSFET N-Ch 800 Volt 11 Amp Power MDmesh | ||
| Manufacturer | STMicroelectronics | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 800 V | - | - |
| Id Continuous Drain Current | 11 A | - | - |
| Rds On Drain Source Resistance | 400 mOhms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 150 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | MDmesh | - | - |
| Packaging | Tube | - | - |
| Height | 9.15 mm | - | - |
| Length | 10.4 mm | - | - |
| Series | STP11NM80 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 4.6 mm | - | - |
| Brand | STMicroelectronics | - | - |
| Forward Transconductance Min | 8 S | - | - |
| Fall Time | 15 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 17 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 46 ns | - | - |
| Typical Turn On Delay Time | 22 ns | - | - |
| Unit Weight | 0.050717 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
STMicroelectronics |
STP11NM80 | MOSFET N-Ch 800 Volt 11 Amp Power MDmesh | |
| STP11NM80 | MOSFET N-CH 800V 11A TO-220 | ||
| STP11NM80 P11NM80 | Neu und Original | ||
| STP11NM80,P11NM80,STP11N | Neu und Original |