PartNumber | STP14N80K5 | STP14NF10 | STP14NF12 |
Description | MOSFET N-channel 800 V, 0.400 Ohm typ., 12 A MDmesh K5 Power MOSFET in a TO-220 package | MOSFET N Ch 100V 0.115 OHM 15A | MOSFET N-Ch, 120V-0.16ohms 14A |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
Tradename | MDmesh | STripFET | - |
Packaging | Tube | - | Tube |
Series | STP14N80K5 | STP14NF10 | STP14NF12 |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 1000 | 1000 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.063493 oz | 0.011640 oz | 0.011640 oz |
Number of Channels | - | 1 Channel | 1 Channel |
Transistor Polarity | - | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | - | 100 V | 120 V |
Id Continuous Drain Current | - | 15 A | 14 A |
Rds On Drain Source Resistance | - | 130 mOhms | 180 mOhms |
Vgs th Gate Source Threshold Voltage | - | 2 V | - |
Vgs Gate Source Voltage | - | 10 V | 20 V |
Qg Gate Charge | - | 15.5 nC | - |
Maximum Operating Temperature | - | + 175 C | + 175 C |
Pd Power Dissipation | - | 60 W | 60 W |
Configuration | - | Single | Single |
Channel Mode | - | Enhancement | Enhancement |
Height | - | 9.15 mm | 9.15 mm |
Length | - | 10.4 mm | 10.4 mm |
Transistor Type | - | 1 N-Channel Power MOSFET | 1 N-Channel |
Width | - | 4.6 mm | 4.6 mm |
Forward Transconductance Min | - | 20 S | - |
Fall Time | - | 8 ns | 8 ns |
Rise Time | - | 25 ns | 25 ns |
Typical Turn Off Delay Time | - | 32 ns | 32 ns |
Typical Turn On Delay Time | - | 16 ns | 16 ns |
Minimum Operating Temperature | - | - | - 55 C |