STP36NF

STP36NF06L vs STP36NF06 vs STP36NF06FP

 
PartNumberSTP36NF06LSTP36NF06STP36NF06FP
DescriptionMOSFET N-Ch 60 Volt 30 AmpMOSFET N-CH 60V 30A TO-220MOSFET N-CH 60V 18A TO-220FP
ManufacturerSTMicroelectronicsST-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current30 A--
Rds On Drain Source Resistance40 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge13 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation70 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101--
TradenameSTripFET--
PackagingTubeTube-
Height9.15 mm--
Length10.4 mm--
SeriesSTP36NF06LN-channel STripFET-
Transistor Type1 N-Channel Power MOSFET1 N-Channel-
TypeMOSFET--
Width4.6 mm--
BrandSTMicroelectronics--
Forward Transconductance Min15 S--
Fall Time13 ns9 ns-
Product TypeMOSFET--
Rise Time80 ns40 ns-
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time19 ns27 ns-
Typical Turn On Delay Time10 ns10 ns-
Unit Weight0.011640 oz0.050717 oz-
Package Case-TO-220-3-
Pd Power Dissipation-70 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-30 A-
Vds Drain Source Breakdown Voltage-60 V-
Rds On Drain Source Resistance-40 mOhms-
Forward Transconductance Min-12 S-
Hersteller Teil # Beschreibung RFQ
STMicroelectronics
STMicroelectronics
STP36NF06L MOSFET N-Ch 60 Volt 30 Amp
STP36NF06 MOSFET N-CH 60V 30A TO-220
STP36NF06FP MOSFET N-CH 60V 18A TO-220FP
STP36NF06L MOSFET N-CH 60V 30A TO-220
STP36NF06,P36NF06, Neu und Original
STP36NF06FP,P36NF06FP,ST Neu und Original
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