PartNumber | STP60NF06 | STP60NF06FP | STP60NF06L |
Description | MOSFET N-Ch 60 Volt 60 Amp | MOSFET N-Ch 60 Volt 60 Amp | MOSFET N-CH 60V 60A TO-220 |
Manufacturer | STMicroelectronics | STMicroelectronics | |
Product Category | MOSFET | MOSFET | FETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220FP-3 | - |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
Id Continuous Drain Current | 60 A | 60 A | - |
Rds On Drain Source Resistance | 16 mOhms | 16 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2 V | - | - |
Vgs Gate Source Voltage | 10 V | 20 V | - |
Qg Gate Charge | 54 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 65 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 110 W | 30 W | - |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | STripFET | STripFET | - |
Packaging | Tube | Tube | Tube |
Height | 9.15 mm | 9.3 mm | - |
Length | 10.4 mm | 10.4 mm | - |
Series | STP60NF06 | STP60NF06FP | STripFET II |
Transistor Type | 1 N-Channel Power MOSFET | 1 N-Channel | 1 N-Channel |
Type | MOSFET | MOSFET | - |
Width | 4.6 mm | 4.6 mm | - |
Brand | STMicroelectronics | STMicroelectronics | - |
Forward Transconductance Min | 50 S | 50 S | - |
Fall Time | 20 ns | 20 ns | 30 ns |
Product Type | MOSFET | MOSFET | - |
Rise Time | 65 ns | 108 ns | 220 ns |
Factory Pack Quantity | 1000 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 45 ns | 43 ns | 55 ns |
Typical Turn On Delay Time | 15 ns | 16 ns | 35 ns |
Unit Weight | 0.011640 oz | 0.071959 oz | 0.050717 oz |
Package Case | - | - | TO-220-3 |
Operating Temperature | - | - | -65°C ~ 175°C (TJ) |
Mounting Type | - | - | Through Hole |
Supplier Device Package | - | - | TO-220AB |
FET Type | - | - | MOSFET N-Channel, Metal Oxide |
Power Max | - | - | 110W |
Drain to Source Voltage Vdss | - | - | 60V |
Input Capacitance Ciss Vds | - | - | 2000pF @ 25V |
FET Feature | - | - | Standard |
Current Continuous Drain Id 25°C | - | - | 60A (Tc) |
Rds On Max Id Vgs | - | - | 14 mOhm @ 30A, 10V |
Vgs th Max Id | - | - | 1V @ 250μA |
Gate Charge Qg Vgs | - | - | 66nC @ 4.5V |
Pd Power Dissipation | - | - | 110 W |
Vgs Gate Source Voltage | - | - | 15 V |
Id Continuous Drain Current | - | - | 60 A |
Vds Drain Source Breakdown Voltage | - | - | 60 V |
Rds On Drain Source Resistance | - | - | 14 mOhms |
Forward Transconductance Min | - | - | 20 S |