STP80N7

STP80N70F4 vs STP80N70F6 vs STP80N70

 
PartNumberSTP80N70F4STP80N70F6STP80N70
DescriptionMOSFET N-channel 68 V, 8.2 mOhm typ., 85 A STripFET DeepGATE Power MOSFET in TO-220 packageMOSFET N CH 68V 96A TO-220
ManufacturerSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETTransistors - FETs, MOSFETs - SingleIC Chips
RoHSY--
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage68 V--
Id Continuous Drain Current85 A--
Rds On Drain Source Resistance8.2 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge90 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation150 W--
ConfigurationSingle--
Channel ModeEnhancement--
SeriesSTP80N70F4N-channel STripFET-
Transistor Type1 N-Channel--
BrandSTMicroelectronics--
Fall Time25 ns23 ns-
Product TypeMOSFET--
Rise Time36 ns29 ns-
SubcategoryMOSFETs--
Typical Turn Off Delay Time80 ns102 ns-
Typical Turn On Delay Time25 ns23 ns-
Unit Weight0.063493 oz0.011640 oz-
Packaging-Tube-
Package Case-TO-220-3-
Pd Power Dissipation-110 W-
Id Continuous Drain Current-96 A-
Vds Drain Source Breakdown Voltage-68 V-
Rds On Drain Source Resistance-8 mOhms-
Qg Gate Charge-99 nC-
Hersteller Teil # Beschreibung RFQ
STMicroelectronics
STMicroelectronics
STP80N70F4 MOSFET N-channel 68 V, 8.2 mOhm typ., 85 A STripFET DeepGATE Power MOSFET in TO-220 package
STP80N70F6 MOSFET N CH 68V 96A TO-220
STP80N70F4 POWER MOSFET N-CHANNEL TO-220
STP80N70 Neu und Original
STP80N70F4 80N70F4 Neu und Original
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