STQ1N

STQ1NK80ZR-AP vs STQ1NK60ZR-AP vs STQ1NC45R-AP

 
PartNumberSTQ1NK80ZR-APSTQ1NK60ZR-APSTQ1NC45R-AP
DescriptionMOSFET N Ch 800V 13 Ohm 1AMOSFET N-channel 600 V, 13 Ohm typ., 0.3 A Zener-protected SuperMESH(TM) Power MOSFET in TO-92 packageMOSFET POWER MOSFET
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-92-3TO-92-3TO-92-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage800 V600 V450 V
Id Continuous Drain Current300 mA300 mA500 mA
Rds On Drain Source Resistance16 Ohms15 Ohms4.5 Ohms
Vgs Gate Source Voltage30 V10 V30 V
Minimum Operating Temperature- 55 C- 55 C- 65 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation3 W3 W3.1 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingAmmo Pack--
Height4.95 mm--
Length4.95 mm--
SeriesSTQ1NK80ZR-APSTQ1NK60ZRSTQ1NC45R
Transistor Type1 N-Channel1 N-Channel Power MOSFET1 N-Channel
Width3.94 mm--
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Fall Time55 ns28 ns12 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time30 ns5 ns4 ns
Factory Pack Quantity200020002000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time22 ns13 ns-
Typical Turn On Delay Time8 ns5.5 ns6.7 ns
Unit Weight0.007760 oz0.007760 oz0.007760 oz
Vgs th Gate Source Threshold Voltage-3 V-
Qg Gate Charge-4.9 nC-
Tradename-SuperMESH-
Forward Transconductance Min-0.5 S-
Hersteller Teil # Beschreibung RFQ
STMicroelectronics
STMicroelectronics
STQ1NK80ZR-AP MOSFET N Ch 800V 13 Ohm 1A
STQ1NK60ZR-AP MOSFET N-channel 600 V, 13 Ohm typ., 0.3 A Zener-protected SuperMESH(TM) Power MOSFET in TO-92 package
STQ1NC45R-AP MOSFET POWER MOSFET
STQ1NC45R-AP MOSFET POWER MOSFET
STQ1NK60ZR-AP MOSFET N-CH 600V 0.3A TO-92
STQ1NK80ZR-AP MOSFET N-CH 800V 0.3A TO-92
STQ1N60ZR-AP Neu und Original
STQ1NC40 Neu und Original
STQ1NC45 Neu und Original
STQ1NC45R Neu und Original
STQ1NC45RA Neu und Original
STQ1NC45RAP Neu und Original
STQ1NC60 Neu und Original
STQ1NC60-AP Neu und Original
STQ1NC60R-AP Neu und Original
STQ1NE10L Neu und Original
STQ1NE10L-AP Neu und Original
STQ1NE10L-APV Neu und Original
STQ1NE10L/APS Neu und Original
STQ1NE10LAP Small Signal Field-Effect Transistor, 1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
STQ1NK60 Neu und Original
STQ1NK60Z Neu und Original
STQ1NK60ZR Neu und Original
STQ1NK60ZR-AP , MMBZ5251 Neu und Original
STQ1NK60ZR-AP,STQ1NK60ZR Neu und Original
STQ1NK60ZR-APF1 Neu und Original
STQ1NK60ZR-APV3 Neu und Original
STQ1NK60ZRAP Power Field-Effect Transistor, 0.3A I(D), 600V, 15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
STQ1NK620ZR-AP Neu und Original
STQ1NK80Z Neu und Original
STQ1NK80ZR Neu und Original
STQ1NR60ZR-AP Neu und Original
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