STS1DN

STS1DNC45 vs STS1DN45K3 vs STS1DNF20

 
PartNumberSTS1DNC45STS1DN45K3STS1DNF20
DescriptionMOSFET N-Ch 450 Volt 0.4 AMOSFET Dual N-Ch 450V 0.5A 3.2 ohm SuperMESH3MOSFET N-CH 8SOIC
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFETFETs - Arrays
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOIC-8SOIC-8-
Number of Channels2 Channel2 Channel-
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage450 V450 V-
Id Continuous Drain Current400 mA500 mA-
Rds On Drain Source Resistance4.1 Ohms3.8 Ohms-
Vgs Gate Source Voltage30 V30 V-
Qg Gate Charge7 nC--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation2 W1.7 W-
ConfigurationDualDual-
Channel ModeEnhancement--
TradenameSuperMESH--
PackagingReelReelReel
Height1.65 mm--
Length5 mm--
ProductMOSFET Small Signal--
SeriesSTS1DNC45STS1DN45K3STS1DNF20
Transistor Type2 N-Channel2 N-Channel-
TypeMOSFET--
Width4 mm--
BrandSTMicroelectronicsSTMicroelectronics-
Fall Time4 ns--
Product TypeMOSFETMOSFET-
Rise Time4 ns--
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn On Delay Time6.7 ns--
Unit Weight0.002998 oz0.017870 oz0.019048 oz
Package Case--SOIC-8
Operating Temperature---
Mounting Type---
Supplier Device Package---
FET Type---
Power Max---
Drain to Source Voltage Vdss---
Input Capacitance Ciss Vds---
FET Feature---
Current Continuous Drain Id 25°C---
Rds On Max Id Vgs---
Vgs th Max Id---
Gate Charge Qg Vgs---
Hersteller Teil # Beschreibung RFQ
STMicroelectronics
STMicroelectronics
STS1DNC45 MOSFET N-Ch 450 Volt 0.4 A
STS1DN45K3 MOSFET Dual N-Ch 450V 0.5A 3.2 ohm SuperMESH3
STS1DNF20 MOSFET N-CH 8SOIC
STS1DN45K3 MOSFET 2N-CH 450V 0.5A 8SOIC
STS1DNC45 MOSFET 2N-CH 450V 0.4A 8SOIC
STS1DNC45-CUT TAPE Neu und Original
STS1DNC60 Neu und Original
STS1DN45 Neu und Original
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