 |  | |
| PartNumber | STT2200N16P55XPSA1 | STT2PF60L |
| Description | Discrete Semiconductor Modules THYR / DIODE MODULE DK | MOSFET P-Ch 60 Volt 2 Amp |
| Manufacturer | Infineon | STMicroelectronics |
| Product Category | Discrete Semiconductor Modules | MOSFET |
| RoHS | Y | Y |
| Product | Diode Power Modules | MOSFET Small Signal |
| Type | Soft Starter | MOSFET |
| Package / Case | BG-PS55-1 | SOT-23-6 |
| Minimum Operating Temperature | - 40 C | - 55 C |
| Maximum Operating Temperature | + 125 C | + 150 C |
| Packaging | Tray | Reel |
| Configuration | Dual | Single |
| Brand | Infineon Technologies | STMicroelectronics |
| Gate Trigger Current Igt | 200 mA | - |
| Holding Current Ih Max | 300 mA | - |
| Transistor Polarity | N-Channel | P-Channel |
| Product Type | Discrete Semiconductor Modules | MOSFET |
| Factory Pack Quantity | 1 | 3000 |
| Subcategory | Discrete Semiconductor Modules | MOSFETs |
| Vgs th Gate Source Threshold Voltage | 0.9 V | - |
| Part # Aliases | SP001650702 STT2200N16P55 | - |
| Technology | - | Si |
| Mounting Style | - | SMD/SMT |
| Number of Channels | - | 1 Channel |
| Vds Drain Source Breakdown Voltage | - | 60 V |
| Id Continuous Drain Current | - | 2 A |
| Rds On Drain Source Resistance | - | 250 mOhms |
| Vgs Gate Source Voltage | - | 15 V |
| Pd Power Dissipation | - | 1.6 W |
| Channel Mode | - | Enhancement |
| Height | - | 1.3 mm |
| Length | - | 3.05 mm |
| Series | - | STT2PF60L |
| Transistor Type | - | 1 P-Channel |
| Width | - | 1.75 mm |
| Fall Time | - | 34 ns |
| Rise Time | - | 34 ns |
| Typical Turn Off Delay Time | - | 42 ns |
| Typical Turn On Delay Time | - | 44 ns |
| Unit Weight | - | 0.000229 oz |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
STT2200N16P55XPSA1 | Discrete Semiconductor Modules THYR / DIODE MODULE DK | |
| STT2200N16P55XPSA1 | SCR MODULE POWERBLOCK PS55-1 | ||
STMicroelectronics |
STT2PF60L | MOSFET P-Ch 60 Volt 2 Amp | |
| STT2PF60L | MOSFET P-CH 60V 2A SOT23-6 | ||
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