PartNumber | STU10NM60N | STU10N60M2 | STU10NM65N |
Description | MOSFET N-channel 600 V Mdmesh 8A | MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2 | MOSFET N-CH 650V 9A IPAK |
Manufacturer | STMicroelectronics | STMicroelectronics | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-251-3 | TO-251-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | - |
Id Continuous Drain Current | 8 A | 7.5 A | - |
Rds On Drain Source Resistance | 530 mOhms | 560 mOhms | - |
Configuration | Single | Single | - |
Tradename | MDmesh | MDmesh | - |
Packaging | Tube | Tube | - |
Series | STU10NM60N | STU10N60M2 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | STMicroelectronics | STMicroelectronics | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Unit Weight | 0.139332 oz | 0.139332 oz | - |
Vgs th Gate Source Threshold Voltage | - | 3 V | - |
Vgs Gate Source Voltage | - | 25 V | - |
Qg Gate Charge | - | 13.5 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Pd Power Dissipation | - | 85 W | - |
Fall Time | - | 13.2 ns | - |
Rise Time | - | 8 ns | - |
Typical Turn Off Delay Time | - | 32.5 ns | - |
Typical Turn On Delay Time | - | 8.8 ns | - |