| PartNumber | STU11N65M2 | STU11NM60ND |
| Description | MOSFET N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in IPAK package | MOSFET N-Ch, 600V-0.37ohms FDMesh 10A |
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | - |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-251-3 | TO-251-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 600 V |
| Id Continuous Drain Current | 7 A | 10 A |
| Rds On Drain Source Resistance | 670 mOhms | 450 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | - |
| Vgs Gate Source Voltage | 25 V | 25 V |
| Qg Gate Charge | 12.5 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 85 W | 90 W |
| Configuration | Single | Single |
| Tradename | MDmesh II Plus | - |
| Packaging | Tube | Tube |
| Product | Power MOSFET | - |
| Series | STU11N65M2 | STI11NM60ND |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | STMicroelectronics | STMicroelectronics |
| Fall Time | 15 ns | 9 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 7.5 ns | 7 ns |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 26 ns | 50 ns |
| Typical Turn On Delay Time | 8.5 ns | 16 ns |
| Unit Weight | 0.139332 oz | 0.050717 oz |
| Channel Mode | - | Enhancement |
| Height | - | 8.95 mm |
| Length | - | 10 mm |
| Width | - | 4.4 mm |