STU11

STU11N65M2 vs STU11NM60ND

 
PartNumberSTU11N65M2STU11NM60ND
DescriptionMOSFET N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in IPAK packageMOSFET N-Ch, 600V-0.37ohms FDMesh 10A
ManufacturerSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFET
RoHSY-
TechnologySiSi
Mounting StyleThrough HoleThrough Hole
Package / CaseTO-251-3TO-251-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage650 V600 V
Id Continuous Drain Current7 A10 A
Rds On Drain Source Resistance670 mOhms450 mOhms
Vgs th Gate Source Threshold Voltage3 V-
Vgs Gate Source Voltage25 V25 V
Qg Gate Charge12.5 nC-
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation85 W90 W
ConfigurationSingleSingle
TradenameMDmesh II Plus-
PackagingTubeTube
ProductPower MOSFET-
SeriesSTU11N65M2STI11NM60ND
Transistor Type1 N-Channel1 N-Channel
BrandSTMicroelectronicsSTMicroelectronics
Fall Time15 ns9 ns
Product TypeMOSFETMOSFET
Rise Time7.5 ns7 ns
Factory Pack Quantity30003000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time26 ns50 ns
Typical Turn On Delay Time8.5 ns16 ns
Unit Weight0.139332 oz0.050717 oz
Channel Mode-Enhancement
Height-8.95 mm
Length-10 mm
Width-4.4 mm
Hersteller Teil # Beschreibung RFQ
STMicroelectronics
STMicroelectronics
STU11N65M2 MOSFET N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in IPAK package
STU11NM60ND MOSFET N-Ch, 600V-0.37ohms FDMesh 10A
STU11N65M2 MOSFET N-CH 650V 7A IPAK
STU11NM60ND MOSFET N-CH 600V 10A IPAK
STU11N65M5 Neu und Original
STU11NB60 Neu und Original
STU11NB60I Neu und Original
STU11NC60 Neu und Original
Top