PartNumber | STU11N65M2 | STU11NM60ND |
Description | MOSFET N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in IPAK package | MOSFET N-Ch, 600V-0.37ohms FDMesh 10A |
Manufacturer | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET |
RoHS | Y | - |
Technology | Si | Si |
Mounting Style | Through Hole | Through Hole |
Package / Case | TO-251-3 | TO-251-3 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 650 V | 600 V |
Id Continuous Drain Current | 7 A | 10 A |
Rds On Drain Source Resistance | 670 mOhms | 450 mOhms |
Vgs th Gate Source Threshold Voltage | 3 V | - |
Vgs Gate Source Voltage | 25 V | 25 V |
Qg Gate Charge | 12.5 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Pd Power Dissipation | 85 W | 90 W |
Configuration | Single | Single |
Tradename | MDmesh II Plus | - |
Packaging | Tube | Tube |
Product | Power MOSFET | - |
Series | STU11N65M2 | STI11NM60ND |
Transistor Type | 1 N-Channel | 1 N-Channel |
Brand | STMicroelectronics | STMicroelectronics |
Fall Time | 15 ns | 9 ns |
Product Type | MOSFET | MOSFET |
Rise Time | 7.5 ns | 7 ns |
Factory Pack Quantity | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 26 ns | 50 ns |
Typical Turn On Delay Time | 8.5 ns | 16 ns |
Unit Weight | 0.139332 oz | 0.050717 oz |
Channel Mode | - | Enhancement |
Height | - | 8.95 mm |
Length | - | 10 mm |
Width | - | 4.4 mm |