STU5N6

STU5N62K3 vs STU5N60M2 vs STU5N65M6

 
PartNumberSTU5N62K3STU5N60M2STU5N65M6
DescriptionMOSFET N-Ch 620V 1.28 Ohm 4.2A SuperMESH 3MOSFET N-Ch 600V 1.26Ohm typ. 3.7A MDmesh M2MOSFET
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-251-3TO-251-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage620 V650 V-
Id Continuous Drain Current4.2 A3.7 A-
Rds On Drain Source Resistance1.6 Ohms1.4 Ohms-
Vgs Gate Source Voltage30 V25 V-
Qg Gate Charge26 nC4.5 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation70 W45 W-
ConfigurationSingleSingle-
TradenameMDmeshMDmesh-
PackagingTubeTube-
SeriesSTU5N62K3STU5N60M2-
Transistor Type1 N-Channel1 N-Channel-
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Unit Weight0.139332 oz0.139332 oz-
Vgs th Gate Source Threshold Voltage-3 V-
Hersteller Teil # Beschreibung RFQ
STMicroelectronics
STMicroelectronics
STU5N62K3 MOSFET N-Ch 620V 1.28 Ohm 4.2A SuperMESH 3
STU5N60M2 MOSFET N-Ch 600V 1.26Ohm typ. 3.7A MDmesh M2
STU5N65M6 MOSFET
STU5N60M2 MOSFET N-CH 600V 3.7A TO220
STU5N62K3 MOSFET N-CH 620V 4.2A IPAK
STU5N65M6 MOSFET N-CHANNEL 650V 4A IPAK
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