 | | |
| PartNumber | STW34NM60ND | STW34NM60N |
| Description | MOSFET N-Ch 600V 0.097 Ohm 29A FDmesh II FD | MOSFET N-Ch 600V 0.092V Ohm 29A MDmesh II PWR MO |
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V |
| Id Continuous Drain Current | 29 A | 31.5 A |
| Rds On Drain Source Resistance | 110 mOhms | 105 mOhms |
| Vgs Gate Source Voltage | 25 V | 10 V |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 190 W | 250 W |
| Configuration | Single | Single |
| Packaging | Tube | Tube |
| Series | STW34NM60ND | STW34NM60N |
| Transistor Type | 1 N-Channel | 1 N-Channel Power MOSFET |
| Brand | STMicroelectronics | STMicroelectronics |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 600 | 600 |
| Subcategory | MOSFETs | MOSFETs |
| Unit Weight | 1.340411 oz | 1.340411 oz |
| Vgs th Gate Source Threshold Voltage | - | 2 V |
| Qg Gate Charge | - | 84 nC |
| Channel Mode | - | Enhancement |
| Tradename | - | MDmesh |
| Fall Time | - | 73 ns |
| Rise Time | - | 36 ns |
| Typical Turn Off Delay Time | - | 104 ns |
| Typical Turn On Delay Time | - | 18 ns |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
STMicroelectronics |
STW34NM60ND | MOSFET N-Ch 600V 0.097 Ohm 29A FDmesh II FD | |
| STW34NM60N | MOSFET N-Ch 600V 0.092V Ohm 29A MDmesh II PWR MO | ||
| STW34NM60N | MOSFET N-CH 600V 29A TO-247 | ||
| STW34NM60ND | MOSFET N-CH 600V 29A TO-247 | ||
| STW34NM60ND 34NM60ND | Neu und Original | ||
| STW34NM60N,34NM60N | Neu und Original |