STW60

STW60NM50N vs STW60NE10 vs STW60N65M5

 
PartNumberSTW60NM50NSTW60NE10STW60N65M5
DescriptionMOSFET N-Ch 500V 0.035 Ohm 68A MDmesh II FETMOSFET N-Ch 100 Volt 60 AmpMOSFET N-Ch 650V 0.049 Ohm 46A Mdmesh V
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247-3TO-247-3TO-247-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage500 V100 V650 V
Id Continuous Drain Current43 A60 A46 A
Rds On Drain Source Resistance43 mOhms22 mOhms59 mOhms
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage25 V20 V25 V
Qg Gate Charge178 nC--
Pd Power Dissipation446 W180 W255 W
ConfigurationSingleSingleSingle
TradenameMDmesh--
PackagingTubeTubeTube
SeriesSTW60NM50NSTW60NE10STFW60N65M5
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Fall Time27.5 ns45 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time36 ns45 ns-
Factory Pack Quantity6003030
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time40 ns--
Typical Turn On Delay Time206 ns160 ns-
Unit Weight1.340411 oz1.340411 oz1.340411 oz
Minimum Operating Temperature-- 65 C- 55 C
Maximum Operating Temperature-+ 175 C+ 150 C
Channel Mode-Enhancement-
Height-20.15 mm-
Length-15.75 mm-
Width-5.15 mm-
Hersteller Teil # Beschreibung RFQ
STMicroelectronics
STMicroelectronics
STW60NM50N MOSFET N-Ch 500V 0.035 Ohm 68A MDmesh II FET
STW60NE10 MOSFET N-Ch 100 Volt 60 Amp
STW60N65M5 MOSFET N-Ch 650V 0.049 Ohm 46A Mdmesh V
STW60N65M5 IGBT Transistors MOSFET N-Ch 650V 0.049 Ohm 46A Mdmesh V
STW60NE10 MOSFET N-CH 100V 60A TO-247
STW60NM50N MOSFET N CH 500V 68A TO-247
STW60N10 MOSFET Transistor, N-Channel, TO-247
STW60N10FI Neu und Original
STW60NE10,W60NE10 Neu und Original
STW60NM10 Neu und Original
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