PartNumber | STW6N95K5 | STW6N90K5 | STW6N120K3 |
Description | MOSFET N-Ch 950V 1 Ohm 9A Zener MDmesh K5 | MOSFET N-channel 900 V, 0.91 Ohm typ., 6 A MDmesh K5 Power MOSFET in a TO-247 package | MOSFET N-CH 1200V 6A TO-247 |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET | FETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247-3 | TO-247-3 | - |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 950 V | 900 V | - |
Id Continuous Drain Current | 9 A | 6 A | - |
Rds On Drain Source Resistance | 1.25 Ohms | 910 mOhms | - |
Vgs Gate Source Voltage | 30 V | 30 V | - |
Qg Gate Charge | 13 nC | 11 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 90 W | 110 W | - |
Tradename | MDmesh | MDmesh | - |
Packaging | Tube | - | Tube |
Series | STW6N95K5 | STW6N90K5 | SuperMESH3 |
Brand | STMicroelectronics | STMicroelectronics | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 600 | 600 | - |
Subcategory | MOSFETs | MOSFETs | - |
Unit Weight | 1.340411 oz | 0.156264 oz | 1.340411 oz |
Number of Channels | - | 1 Channel | 1 Channel |
Vgs th Gate Source Threshold Voltage | - | 3 V | - |
Configuration | - | Single | Single |
Channel Mode | - | Enhancement | Enhancement |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
Fall Time | - | 15.5 ns | 32 ns |
Rise Time | - | 12.2 ns | 12 ns |
Typical Turn Off Delay Time | - | 30.4 ns | 58 ns |
Typical Turn On Delay Time | - | 12.4 ns | 30 ns |
Package Case | - | - | TO-247-3 |
Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
Mounting Type | - | - | Through Hole |
Supplier Device Package | - | - | TO-247 |
FET Type | - | - | MOSFET N-Channel, Metal Oxide |
Power Max | - | - | 150W |
Drain to Source Voltage Vdss | - | - | 1200V (1.2kV) |
Input Capacitance Ciss Vds | - | - | 1050pF @ 100V |
FET Feature | - | - | Standard |
Current Continuous Drain Id 25°C | - | - | 6A (Tc) |
Rds On Max Id Vgs | - | - | 2.4 Ohm @ 2.5A, 10V |
Vgs th Max Id | - | - | 5V @ 100μA |
Gate Charge Qg Vgs | - | - | 34nC @ 10V |
Pd Power Dissipation | - | - | 150 W |
Vgs Gate Source Voltage | - | - | 30 V |
Id Continuous Drain Current | - | - | 6 A |
Vds Drain Source Breakdown Voltage | - | - | 1200 V |
Rds On Drain Source Resistance | - | - | 2.4 Ohms |
Qg Gate Charge | - | - | 34 nC |