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| PartNumber | SUG80050E-GE3 | SUG90090E-GE3 |
| Description | MOSFET 150V Vds 20V Vgs TO-247 | MOSFET 200V Vds ThunderFET 100A Id +/-20V Vgs |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 150 V | 200 V |
| Id Continuous Drain Current | 100 A | 100 A |
| Rds On Drain Source Resistance | 4.5 mOhms | 7.9 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 165 nC | 129 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Pd Power Dissipation | 500 W | 395 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Tube | Tube |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 60 S | 54 S |
| Fall Time | 55 ns | 40 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 44 ns | 44 ns |
| Factory Pack Quantity | 500 | 500 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 72 ns | 60 ns |
| Typical Turn On Delay Time | 18 ns | 18 ns |
| Unit Weight | 0.211644 oz | 0.211644 oz |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SUG80050E-GE3 | MOSFET 150V Vds 20V Vgs TO-247 | |
| SUG90090E-GE3 | MOSFET 200V Vds ThunderFET 100A Id +/-20V Vgs | ||
Vishay |
SUG90090E-GE3 | MOSFET N-CH 200V 100A TO247AC | |
| SUG80050E-GE3 | MOSFET N-CH 150V 100A TO247AC | ||
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