SUP

SUP85N10-10-E3 vs SUP85N10-10-GE3 vs SUP85N04-03-E3

 
PartNumberSUP85N10-10-E3SUP85N10-10-GE3SUP85N04-03-E3
DescriptionMOSFET 100V N-CH 175 DEG.CMOSFET 100V 85A 250W 10.5mohm @ 10VMOSFET RECOMMENDED ALT 781-SUP90N06-6M0P-E3
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSEEE
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220-3TO-220-3TO-220-3
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current85 A85 A-
Rds On Drain Source Resistance8.5 mOhms8.5 mOhms-
Vgs th Gate Source Threshold Voltage1 V1 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge160 nC160 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation250 W250 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameTrenchFETTrenchFETTrenchFET
PackagingTubeTubeTube
SeriesSUPSUPSUP
Transistor Type1 N-Channel1 N-Channel-
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min25 S25 S-
Fall Time130 ns130 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time90 ns90 ns-
Factory Pack Quantity505050
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time55 ns55 ns-
Typical Turn On Delay Time12 ns12 ns-
Unit Weight0.211644 oz0.211644 oz0.211644 oz
Height-15.49 mm15.49 mm
Length-10.41 mm10.41 mm
Width-4.7 mm4.7 mm
  • Beginnen mit
  • SUP 445
Hersteller Teil # Beschreibung RFQ
Vishay / Siliconix
Vishay / Siliconix
SUP90330E-GE3 MOSFET 200V Vds 20V Vgs TO-220AB
SUP85N10-10-E3 MOSFET 100V N-CH 175 DEG.C
SUP85N10-10-GE3 MOSFET 100V 85A 250W 10.5mohm @ 10V
SUP85N15-21-E3 MOSFET 150V 85A 300W 21mohm @ 10V
SUP90142E-GE3 MOSFET 200V Vds 20V Vgs TO-220AB
SUP90220E-GE3 MOSFET 200V Vds 20V Vgs TO-220AB
SUP85N04-03-E3 MOSFET RECOMMENDED ALT 781-SUP90N06-6M0P-E3
SUP85N10-10P-GE3 MOSFET RECOMMENDED ALT 781-SUP85N10-10-GE3
SUP90140E-GE3 MOSFET 200V Vds 20V Vgs TO-220
Vishay
Vishay
SUP85N03-3M6P-GE3 Darlington Transistors MOSFET 30 Volts 85 Amps 78.1 Watts
SUP85N04-03-E3 IGBT Transistors MOSFET 40V 85A 250W
SUP85N10-10-GE3 RF Bipolar Transistors MOSFET 100V 85A 250W 10.5mohm @ 10V
SUP85N10-10-E3 MOSFET N-CH 100V 85A TO220AB
SUP85N10-10P-GE3 MOSFET N-CH 100V 85A TO220AB
SUP85N15-21-E3 MOSFET N-CH 150V 85A TO220AB
SUP90140E-GE3 MOSFET N-CH 200V 90A TO220AB
SUP90142E-GE3 MOSFET N-CH 200V 90A TO220AB
SUP90N03-03-E3 MOSFET N-CH 30V 90A TO220AB
SUP85N03-3M6P Neu und Original
SUP85N03-3M6P-E3 Neu und Original
SUP85N04-03 MOSFET RECOMMENDED ALT 781-SUP90N06-6M0P-E3
SUP85N04-03-E Neu und Original
SUP85N06 Neu und Original
SUP85N06,SUP85N06-05 Neu und Original
SUP85N06-05 MOSFET RECOMMENDED ALT 781-SUP90N06-6M0P-E3
SUP85N06-05-E3 Neu und Original
SUP85N08-08 Neu und Original
SUP85N10 Neu und Original
SUP85N10 85N10 85A 100V Neu und Original
SUP85N10-10,SUP85N06 Neu und Original
SUP85N10-10E-3 Neu und Original
SUP85N10-10L-GE3 Neu und Original
SUP85N10-10P Neu und Original
SUP85N10-10_06 Neu und Original
SUP85N100 Neu und Original
SUP85N1010 Neu und Original
SUP85N1010GE3 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SUP85N15 Neu und Original
SUP85N15-21 Neu und Original
SUP90140EGE3 Power Field-Effect Transistor, 90A I(D), 200V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
SUP90N03 Neu und Original
SUP90N03-03 Neu und Original
SUP90N04-2 Neu und Original
SUP90N04-2M8P Neu und Original
SUP90N04-3M3P Neu und Original
SUP85N04 Neu und Original
SUP85N10-10 MOSFET RECOMMENDED ALT 781-SUP85N10-10-E3
SUP85N04-04 Neu und Original
SUP85N04-04-E3 Neu und Original
SUP85NQ4-04 Neu und Original
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