 |  | | |
| PartNumber | SUP53P06-20-E3 | SUP53P06-20 | SUP53P06-20-E3-ND |
| Description | MOSFET 60V 53A 104.2W 19.5mohm @ 10V | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 53 A | - | - |
| Rds On Drain Source Resistance | 16 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 115 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 104.2 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Tube | - | - |
| Series | SUP | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 20 S | - | - |
| Fall Time | 40 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 7 ns | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 70 ns | - | - |
| Typical Turn On Delay Time | 10 ns | - | - |
| Unit Weight | 0.211644 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SUP53P06-20-E3 | MOSFET 60V 53A 104.2W 19.5mohm @ 10V | |
| SUP53P06-20 | Neu und Original | ||
| SUP53P06-20-E3-ND | Neu und Original | ||
| SUP53P06-20-GE3-D | Neu und Original | ||
| SUP53P0620GE3 | Power Bipolar Transistor, P-Channel | ||
Vishay |
SUP53P06-20-E3 | MOSFET P-CH 60V 9.2A TO220AB | |
| SUP53P06-20-GE3 | MOSFET P-CH 60V 9.2A TO220AB |