TF262T

TF262TH-5-TL-H vs TF262TH-4-TL-H vs TF262TH-4-TL-HX

 
PartNumberTF262TH-5-TL-HTF262TH-4-TL-HTF262TH-4-TL-HX
DescriptionJFET NCH J-FETJFET N-CH 1MA 100MW
ManufacturerON SemiconductorON Semiconductor-
Product CategoryJFETJFETs (Junction Field Effect)-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseVTFP-3--
Transistor PolarityN-ChannelN-Channel-
ConfigurationSingleSingle-
Vds Drain Source Breakdown Voltage- 20 V--
Vgs Gate Source Breakdown Voltage- 20 V--
Drain Source Current at Vgs=0350 uA--
Id Continuous Drain Current1 mA--
Pd Power Dissipation100 mW--
SeriesTF262THTF262TH-
PackagingReelTape & Reel (TR)-
TypeJFET--
BrandON Semiconductor--
Gate Source Cutoff Voltage- 1 V- 1 V-
Factory Pack Quantity8000--
Package Case-3-SMD, Flat Leads-
Mounting Type-Surface Mount-
Supplier Device Package-VTFP-
FET Type-N-Channel-
Power Max-100mW-
Voltage Breakdown V BRGSS---
Drain to Source Voltage Vdss-240 uA-
Current Drain Idss Vds Vgs=0-140μA @ 2V-
Current Drain Id Max-1mA-
Voltage Cutoff VGS off Id-200mV @ 1μA-
Input Capacitance Ciss Vds-3.5pF @ 2V-
Resistance RDS On---
Pd Power Dissipation-100 mW-
Id Continuous Drain Current-1 mA-
Vds Drain Source Breakdown Voltage-- 20 V-
Vgs Gate Source Breakdown Voltage-- 20 V-
Hersteller Teil # Beschreibung RFQ
ON Semiconductor
ON Semiconductor
TF262TH-5-TL-H JFET NCH J-FET
TF262TH-5-TL-H JFET N-CH 1MA 100MW
TF262TH-4-TL-H JFET N-CH 1MA 100MW
TF262TH-4-TL-HX Neu und Original
TF262TH-5-TL-H-T8 Neu und Original
TF262TH-5-TL-HX Neu und Original
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