TISP6151

TISP61511DR-S vs TISP61511D vs TISP61511DR

 
PartNumberTISP61511DR-STISP61511DTISP61511DR
DescriptionSCRs Dual P Gate Forward ConductingSCRs Dual P Gate Forward ConductingSCRs Dual P Gate Forward Conducting
ManufacturerBourns--
Product CategorySCRs--
RoHSY--
SeriesTISP61511D--
Rated Repetitive Off State Voltage VDRM100 V--
Off State Leakage Current @ VDRM IDRM5 uA--
On State RMS Current It RMS---
Vf Forward Voltage3 V--
Gate Trigger Voltage Vgt2.5 V--
Gate Trigger Current Igt5 mA--
Holding Current Ih Max150 mA--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 85 C--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
PackagingReel--
Breakover Voltage VBO- 58 V--
Current Rating5 uA--
TypeDual Forward Conducting P-Gate Thyristors--
BrandBourns--
Non Repetitive On State Current5 A--
Product TypeSCRs--
Factory Pack Quantity2500--
SubcategoryThyristors--
TradenameTISP--
Unit Weight0.017870 oz--
Hersteller Teil # Beschreibung RFQ
Bourns
Bourns
TISP61511DR-S SCRs Dual P Gate Forward Conducting
TISP61511DR-S SCRs Dual P Gate Forward Conducting
TISP61511D SCRs Dual P Gate Forward Conducting
TISP61511DR SCRs Dual P Gate Forward Conducting
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