TISP8200

TISP8200HDMR-S vs TISP8200MDR-S

 
PartNumberTISP8200HDMR-STISP8200MDR-S
DescriptionSCRs Buffered P-Gate SCR DualSCRs PROTECTOR - BUFFERED P-GATE PROG. PROT.
ManufacturerBournsBourns
Product CategorySCRsSCRs
RoHSYY
SeriesTISP820xHDMTISP8200M
Breakover Current IBO Max60 A11 A
Rated Repetitive Off State Voltage VDRM- 120 V- 120 V
Off State Leakage Current @ VDRM IDRM- 5 uA5 uA
On State RMS Current It RMS--
Maximum Gate Peak Inverse Voltage120 V120 V
Gate Trigger Current Igt15 mA5 mA
Holding Current Ih Max- 150 mA- 150 mA
Minimum Operating Temperature- 55 C- 40 C
Maximum Operating Temperature+ 150 C+ 85 C
Mounting StyleSMD/SMTSMD/SMT
Package / CaseSOIC-8SO-8
PackagingReelReel
Breakover Voltage VBO- 82 V- 82 V
Height2.2 - 0.1 mm1.55 mm
Length5.6 mm5 mm
Off State Capacitance CO65 pF35 pF
TypeDual Polarity SLIC Overvoltage ProtectionDual Polarity SLIC Overvoltage Protection
Width5.6 mm4 mm
BrandBournsBourns
Non Repetitive On State Current60 A11 A
Product TypeSCRsSCRs
Factory Pack Quantity20002500
SubcategoryThyristorsThyristors
TradenameTISPTISP
Unit Weight0.004762 oz0.017870 oz
Current Rating-50 uA
Hersteller Teil # Beschreibung RFQ
Bourns
Bourns
TISP8200HDMR-S SCRs Buffered P-Gate SCR Dual
TISP8200MDR-S SCRs PROTECTOR - BUFFERED P-GATE PROG. PROT.
TISP8200HDMR-S SCRs Buffered P-Gate SCR Dual
TISP8200MDR-S SCRs PROTECTOR - BUFFERED P-GATE PROG. PROT.
TISP8200MDR SCRs
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